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Stiens, J., Kuijk, M., Vounckx, R., Borghs, G. (1991) New modulator for far‐infrared light: Integrated mirror optical switch. Applied Physics Letters, 59 (25). 3210-3212 doi:10.1063/1.105734

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Reference TypeJournal (article/letter/editorial)
TitleNew modulator for far‐infrared light: Integrated mirror optical switch
JournalApplied Physics Letters
AuthorsStiens, J.Author
Kuijk, M.Author
Vounckx, R.Author
Borghs, G.Author
Year1991 (December 16)Volume59
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.105734Search in ResearchGate
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Mindat Ref. ID8496836Long-form Identifiermindat:1:5:8496836:4
GUID0
Full ReferenceStiens, J., Kuijk, M., Vounckx, R., Borghs, G. (1991) New modulator for far‐infrared light: Integrated mirror optical switch. Applied Physics Letters, 59 (25). 3210-3212 doi:10.1063/1.105734
Plain TextStiens, J., Kuijk, M., Vounckx, R., Borghs, G. (1991) New modulator for far‐infrared light: Integrated mirror optical switch. Applied Physics Letters, 59 (25). 3210-3212 doi:10.1063/1.105734
In(1991, December) Applied Physics Letters Vol. 59 (25) AIP Publishing

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Kuijk, M., Heremans, P. L., Borghs, G., Vounckx, R. (1994) Depleted double‐heterojunction optical thyristor. Applied Physics Letters, 64 (16). 2073-2075 doi:10.1063/1.111687
Kuijk, M., Vounckx, R. (1989) Optical plasma resonance in semiconductors: Novel concepts for modulating far‐infrared light. Journal of Applied Physics, 66 (4). 1544-1548 doi:10.1063/1.344414
Kuijk, M., Heremans, P., Borghs, G. (1991) Highly sensitiveNpnPoptoelectronic switch by AlAs regrowth. Applied Physics Letters, 59 (5). 497-498 doi:10.1063/1.105418
Heremans, P., Kuijk, M., Vounckx, R., Borghs, G. (1994) Differential opticalPnpNswitch operating at 16 MHz with 250‐fJ optical input energy. Applied Physics Letters, 65 (1). 19-21 doi:10.1063/1.113058
Bickel, G., Heremans, P., Kuijk, M., Vounckx, R., Borghs, G. (1997) Receiver with optical thyristors operating at 155 Mbit/s with 3 femto-Joule optical inputs. Applied Physics Letters, 70 (6). 750-752 doi:10.1063/1.118269
Stiens, J., De Tandt, C., Ranson, W., Vounckx, R., Demeester, P., Moerman, I. (1994) Experimental study of an In0.53Ga0.47As–InP resonant plasma waveguide modulator for medium‐infrared light. Applied Physics Letters, 65 (18). 2341-2343 doi:10.1063/1.112739
Heremans, P. L., Kuijk, M., Borghs, G., Suda, D. A., Hayes, R. E., Vounckx, R. (1992) Fast turn‐off of two‐terminal double‐heterojunction optical thyristors. Applied Physics Letters, 61 (11). 1326-1328 doi:10.1063/1.107581
Heremans, P., Kuijk, M., Windisch, R., Vanderhaegen, J., De Neve, H., Vounckx, R., Borghs, G. (1997) Angular spectroscopic analysis: An optical characterization technique for laterally oxidized AlGaAs layers. Journal of Applied Physics, 82 (10). 5265-5267 doi:10.1063/1.366395
Kotov, V., Stiens, J., Shkerdin, G., Ranson, W., De Tandt, C., Borghs, G., Vounckx, R. (2002) Impact of deformation potential scattering on free-carrier induced optical nonlinearities: An experimental study in GaAs. Journal of Applied Physics, 91 (7). 3992-3999 doi:10.1063/1.1448881
Vandermeiren, W, Stiens, J, Shkerdin, G, De Tandt, C, Vounckx, R (2014) Normal incidence infrared modulator based on single quantum well intersubband transitions. Journal of Physics D: Applied Physics, 47. 25104pp. doi:10.1088/0022-3727/47/2/025104
Lieten, R. R., Degroote, S., Kuijk, M., Borghs, G. (2007) Crystalline Ge3N4 on Ge(111). Applied Physics Letters, 91 (22). 222110pp. doi:10.1063/1.2818679
 
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