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Hsu, W. C., Chen, C. M., Hsu, R. T. (1991) A δ‐doped GaAs/graded InxGa1−xAs/GaAs pseudomorphic structure grown by low‐pressure metal organic chemical vapor deposition. Applied Physics Letters, 59 (9). 1075-1077 doi:10.1063/1.106349

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Reference TypeJournal (article/letter/editorial)
TitleA δ‐doped GaAs/graded InxGa1−xAs/GaAs pseudomorphic structure grown by low‐pressure metal organic chemical vapor deposition
JournalApplied Physics Letters
AuthorsHsu, W. C.Author
Chen, C. M.Author
Hsu, R. T.Author
Year1991 (August 26)Volume59
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.106349Search in ResearchGate
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Mindat Ref. ID8497640Long-form Identifiermindat:1:5:8497640:6
GUID0
Full ReferenceHsu, W. C., Chen, C. M., Hsu, R. T. (1991) A δ‐doped GaAs/graded InxGa1−xAs/GaAs pseudomorphic structure grown by low‐pressure metal organic chemical vapor deposition. Applied Physics Letters, 59 (9). 1075-1077 doi:10.1063/1.106349
Plain TextHsu, W. C., Chen, C. M., Hsu, R. T. (1991) A δ‐doped GaAs/graded InxGa1−xAs/GaAs pseudomorphic structure grown by low‐pressure metal organic chemical vapor deposition. Applied Physics Letters, 59 (9). 1075-1077 doi:10.1063/1.106349
In(1991, August) Applied Physics Letters Vol. 59 (9) AIP Publishing

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Wu, C. L., Hsu, W. C., Shieh, H. M., Liu, W. C. (1994) Mobility enhancement in double δ‐doped GaAs/InxGa1−xAs/GaAs pseudomorphic structures by grading the heterointerfaces. Applied Physics Letters, 64 (22). 3027-3029 doi:10.1063/1.111392
Hsu, W. C., Chen, C. M., Lin, W. (1991) Variation of the mobility and the two‐dimensional electron gas concentration with indium composition in δ‐doped GaAs/InxGa1−xAs/GaAs pseudomorphic structures. Journal of Applied Physics, 70 (8). 4332-4335 doi:10.1063/1.349113
Chang, C. Y., Lin, W., Hsu, W. C., Wu, T. S., Chang, S. Z., Wang, C. (1991) The δ-Doped In0.25Ga0.75As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition*. Japanese Journal of Applied Physics, 30. 1158-1163 doi:10.1143/jjap.30.1158
Chang, C. Y., Lee, M. K., Su, Y. K., Hsu, W. C. (1983) Enhancement of growth rate due to tin doping in GaAs epilayer grown by low pressure metal‐organic chemical vapor deposition. Journal of Applied Physics, 54 (9). 5464-5465 doi:10.1063/1.332690
Lee, M. K., Chang, C. Y., Su, Y. K. (1983) Investigation of Sn‐doped GaAs epilayers grown by low pressure metal‐organic chemical vapor deposition. Applied Physics Letters, 42 (1). 88-89 doi:10.1063/1.93737
Bertolet, Daniel C., Hsu, Jung‐Kuei, Jones, Stephen H., Lau, Kei May (1988) Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor deposition. Applied Physics Letters, 52 (4). 293-295 doi:10.1063/1.99497
Hsu, C. C., Xu, J. B., Wilson, I. H., Wang, S. M. (1995) Surface morphology of metalorganic vapor phase epitaxy grown strained‐layer InxGa1−xAs on GaAs observed by atomic force microscopy. Applied Physics Letters, 66 (5). 604-606 doi:10.1063/1.114027
Lee, W. C., Hsu, T. M., Wang, S. C., Chang, M. N., Chyi, J.-I. (1998) The Fermi level of annealed low-temperature GaAs on Si-δ-doped GaAs grown by molecular beam epitaxy. Journal of Applied Physics, 83 (1). 486-490 doi:10.1063/1.366719
Hsu, R. T., Hsu, W. C., Kao, M. J., Wang, J. S. (1995) Characteristics of a δ ‐doped GaAs/InGaAs p‐channel heterostructure field‐effect transistor. Applied Physics Letters, 66 (21). 2864-2866 doi:10.1063/1.113455
Kao, M. J., Hsu, W. C., Hsu, R. T., Wu, Y. H., Lin, T. Y., Chang, C. Y. (1995) Characteristics of graded‐like multiple‐delta‐doped GaAs field effect transistors. Applied Physics Letters, 66 (19). 2505-2506 doi:10.1063/1.113148
Chang, W.-H., Chen, Hsiang-Yu, Chang, H.-S., Chen, W.-Y., Hsu, T. M., Hsieh, T.-P., Chyi, J.-I., Yeh, N.-T. (2005) Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 86 (13). 131917pp. doi:10.1063/1.1894613
 
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