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Sharma, S. C., Hyer, R. C., Hozhabri, N., Pas, M. F., Kim, S. (1992) Depth and radial profiles of defects in Czochralski‐grown silicon. Applied Physics Letters, 61 (16). 1939-1941 doi:10.1063/1.108369

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Reference TypeJournal (article/letter/editorial)
TitleDepth and radial profiles of defects in Czochralski‐grown silicon
JournalApplied Physics Letters
AuthorsSharma, S. C.Author
Hyer, R. C.Author
Hozhabri, N.Author
Pas, M. F.Author
Kim, S.Author
Year1992 (October 19)Volume61
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.108369Search in ResearchGate
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Mindat Ref. ID8500466Long-form Identifiermindat:1:5:8500466:3
GUID0
Full ReferenceSharma, S. C., Hyer, R. C., Hozhabri, N., Pas, M. F., Kim, S. (1992) Depth and radial profiles of defects in Czochralski‐grown silicon. Applied Physics Letters, 61 (16). 1939-1941 doi:10.1063/1.108369
Plain TextSharma, S. C., Hyer, R. C., Hozhabri, N., Pas, M. F., Kim, S. (1992) Depth and radial profiles of defects in Czochralski‐grown silicon. Applied Physics Letters, 61 (16). 1939-1941 doi:10.1063/1.108369
In(1992, October) Applied Physics Letters Vol. 61 (16) AIP Publishing

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Prokes, S. M., Freitas, J. A., Searson, P. C. (1992) Microluminescence depth profiles and annealing effects in porous silicon. Applied Physics Letters, 60 (26). 3295-3297 doi:10.1063/1.106724
Kitano, T., Saito, S., Tanigawa, S. (1994) Annihilation of grown‐in defects in Czochralski‐grown silicon probed with variable‐energy positron beam. Applied Physics Letters, 65 (19). 2434-2436 doi:10.1063/1.112698
Perez, J. M., Lin, C., Rivera, W., Hyer, R. C., Green, M., Sharma, S. C., Chopra, D. R., Chourasia, A. R. (1993) Scanning tunneling microscopy of the electronic structure of chemical vapor deposited diamond films. Applied Physics Letters, 62 (16). 1889-1891 doi:10.1063/1.109533
Hozhabri, N, Bailey, J B, Koymen, A R, Sharma, S C, Alavi, K (1994) Correlation between arsenic precipitates and vacancy-type defects in low-temperature-grown GaAs. Journal of Physics: Condensed Matter, 6 (31). doi:10.1088/0953-8984/6/31/006
Moustaizis, S. D., Tatarakis, M., Kalpouzos, C., Fotakis, C. (1992) High current and directional electron beams produced from gold photocathodes by ultrashort excimer laser pulses. Applied Physics Letters, 60 (16). 1939-1941 doi:10.1063/1.107157
Yamamoto, N., Petroff, P. M., Patel, J. R. (1983) Rod‐like defects in oxygen‐rich Czochralski grown silicon. Journal of Applied Physics, 54 (6). 3475-3478 doi:10.1063/1.332411
McQuaid, S. A., Newman, R. C., Missous, M., O’Hagan, S. (1992) Evidence for donor‐gallium vacancy pairs in silicon doped GaAs grown by molecular beam epitaxy at low temperatures. Applied Physics Letters, 61 (25). 3008-3010 doi:10.1063/1.107993
Gao, M., Duan, X. F., Peng, L.-M., Li, J. (1998) Void-like defects in annealed Czochralski silicon. Applied Physics Letters, 73 (16). 2311-2312 doi:10.1063/1.121807
Ohbu, I., Takahama, M., Hiruma, K. (1992) Defects in low‐temperature‐grown GaAs annealed at 800 °C. Applied Physics Letters, 61 (14). 1679-1681 doi:10.1063/1.108449
Chen, C. S., Li, C. F., Ye, H. J., Shen, S. C., Yang, D. R. (1994) Formation of nitrogen‐oxygen donors in N‐doped Czochralski‐silicon crystal. Journal of Applied Physics, 76 (6). 3347-3350 doi:10.1063/1.357458
Itsumi, Manabu, Kiyosumi, Fumio (1982) Origin and elimination of defects in SiO2thermally grown on Czochralski silicon substrate. Applied Physics Letters, 40 (6). 496-498 doi:10.1063/1.93155
 
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