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Gao, M., Duan, X. F., Peng, L.-M., Li, J. (1998) Void-like defects in annealed Czochralski silicon. Applied Physics Letters, 73 (16). 2311-2312 doi:10.1063/1.121807

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Reference TypeJournal (article/letter/editorial)
TitleVoid-like defects in annealed Czochralski silicon
JournalApplied Physics Letters
AuthorsGao, M.Author
Duan, X. F.Author
Peng, L.-M.Author
Li, J.Author
Year1998 (October 19)Volume73
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.121807Search in ResearchGate
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Mindat Ref. ID8522082Long-form Identifiermindat:1:5:8522082:7
GUID0
Full ReferenceGao, M., Duan, X. F., Peng, L.-M., Li, J. (1998) Void-like defects in annealed Czochralski silicon. Applied Physics Letters, 73 (16). 2311-2312 doi:10.1063/1.121807
Plain TextGao, M., Duan, X. F., Peng, L.-M., Li, J. (1998) Void-like defects in annealed Czochralski silicon. Applied Physics Letters, 73 (16). 2311-2312 doi:10.1063/1.121807
In(1998, October) Applied Physics Letters Vol. 73 (16) AIP Publishing

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Duan, X. F., Gao, M., Peng, L.-M. (1998) Accurate measurement of phase shift in electron holography. Applied Physics Letters, 72 (7). 771-773 doi:10.1063/1.120888
Gao, Min, Duan, X. F., Wang, Fenglian, Li, Jianming (1998) Two-dimensional network of dislocations and nanocavities in hydrogen-implanted and two-step annealed silicon. Applied Physics Letters, 72 (20). 2544-2546 doi:10.1063/1.121413
Ueki, Takemi, Itsumi, Manabu, Takeda, Tadao (1997) Octahedral void defects observed in the bulk of Czochralski silicon. Applied Physics Letters, 70 (10). 1248-1250 doi:10.1063/1.118543
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Yamamoto, N., Petroff, P. M., Patel, J. R. (1983) Rod‐like defects in oxygen‐rich Czochralski grown silicon. Journal of Applied Physics, 54 (6). 3475-3478 doi:10.1063/1.332411
Sharma, S. C., Hyer, R. C., Hozhabri, N., Pas, M. F., Kim, S. (1992) Depth and radial profiles of defects in Czochralski‐grown silicon. Applied Physics Letters, 61 (16). 1939-1941 doi:10.1063/1.108369
Karwasz, G. P., Misiuk, A., Ceschini, M., Pavesi, L. (1996) Visible photoluminescence from pressure annealed intrinsic Czochralski‐grown silicon. Applied Physics Letters, 69 (19). 2900-2902 doi:10.1063/1.117356
Yu, Xuegong, Wang, Peng, Chen, Peng, Li, Xiaoqiang, Yang, Deren (2010) Suppression of boron–oxygen defects in p-type Czochralski silicon by germanium doping. Applied Physics Letters, 97 (5). 51903pp. doi:10.1063/1.3475486
Itsumi, Manabu, Ueki, Takemi, Watanabe, Masaki, Yabumoto, Norikuni (1998) Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon. Japanese Journal of Applied Physics, 37. 1228-1235 doi:10.1143/jjap.37.1228
Steele, A. G., Thewalt, M. L. W. (1989) Photoluminescence studies of defects in annealed Czochralski silicon. Canadian Journal of Physics, 67. 268-274 doi:10.1139/p89-047
Maring, D. B., Tavlykaev, R. F., Ramaswamy, R. V., Korkishko, Yu. N., Fedorov, V. A., Zavada, J. M. (1998) Erratum: “Effect of crystal phases on refractive index profiles of annealed proton-exchanged waveguides in X-cut LiTaO3” [Appl. Phys. Lett. 73, 423 (1998)]. Applied Physics Letters, 73 (16). 2380 doi:10.1063/1.122467
 
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