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Hsu, J. W. P., Fitzgerald, E. A., Xie, Y. H., Silverman, P. J. (1994) Near‐field scanning optical microscopy imaging of individual threading dislocations on relaxed GexSi1−xfilms. Applied Physics Letters, 65 (3). 344-346 doi:10.1063/1.112366

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Reference TypeJournal (article/letter/editorial)
TitleNear‐field scanning optical microscopy imaging of individual threading dislocations on relaxed GexSi1−xfilms
JournalApplied Physics Letters
AuthorsHsu, J. W. P.Author
Fitzgerald, E. A.Author
Xie, Y. H.Author
Silverman, P. J.Author
Year1994 (July 18)Volume65
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.112366Search in ResearchGate
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Mindat Ref. ID8510947Long-form Identifiermindat:1:5:8510947:2
GUID0
Full ReferenceHsu, J. W. P., Fitzgerald, E. A., Xie, Y. H., Silverman, P. J. (1994) Near‐field scanning optical microscopy imaging of individual threading dislocations on relaxed GexSi1−xfilms. Applied Physics Letters, 65 (3). 344-346 doi:10.1063/1.112366
Plain TextHsu, J. W. P., Fitzgerald, E. A., Xie, Y. H., Silverman, P. J. (1994) Near‐field scanning optical microscopy imaging of individual threading dislocations on relaxed GexSi1−xfilms. Applied Physics Letters, 65 (3). 344-346 doi:10.1063/1.112366
In(1994, July) Applied Physics Letters Vol. 65 (3) AIP Publishing

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Hsu, J. W. P., Fitzgerald, E. A., Xie, Y. H., Silverman, P. J., Cardillo, M. J. (1992) Surface morphology of related GexSi1−xfilms. Applied Physics Letters, 61 (11). 1293-1295 doi:10.1063/1.107569
Hsu, J. W. P., Fitzgerald, E. A., Xie, Y. H., Silverman, P. J. (1996) Studies of electrically active defects in relaxed GeSi films using a near‐field scanning optical microscope. Journal of Applied Physics, 79 (10). 7743-7750 doi:10.1063/1.362378
Hsu, J. W. P., Ng, H. M., Sergent, A. M., Chu, S. N. G. (2002) Scanning Kelvin force microscopy imaging of surface potential variations near threading dislocations in GaN. Applied Physics Letters, 81 (19). 3579-3581 doi:10.1063/1.1519732
Fitzgerald, E. A., Xie, Y.‐H., Green, M. L., Brasen, D., Kortan, A. R., Michel, J., Mii, Y.‐J, Weir, B. E. (1991) Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates. Applied Physics Letters, 59 (7). 811-813 doi:10.1063/1.105351
Jones, D. E., Pelz, J. P., Hong, Y., Tsong, I. S. T., Xie, Y.‐H., Silverman, P. J. (1996) Strain field imaging on Si/SiGe(001)‐(2×1) surfaces by low‐energy electron microscopy and scanning tunneling microscopy. Applied Physics Letters, 69 (21). 3245-3247 doi:10.1063/1.118024
Buratto, S. K., Hsu, J. W. P., Trautman, J. K., Betzig, E., Bylsma, R. B., Bahr, C. C., Cardillo, M. J. (1994) Imaging InGaAsP quantum-well lasers using near-field scanning optical microscopy. Journal of Applied Physics, 76 (12). 7720-7725 doi:10.1063/1.357946
Xie, Y. H., Monroe, Don, Fitzgerald, E. A., Silverman, P. J., Thiel, F. A., Watson, G. P. (1993) Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy. Applied Physics Letters, 63 (16). 2263-2264 doi:10.1063/1.110547
McDaniel, A. A., Hsu, J. W. P., Gabor, A. M. (1997) Near-field scanning optical microscopy studies of Cu(In,Ga)Se2 solar cells. Applied Physics Letters, 70 (26). 3555-3557 doi:10.1063/1.119231
Fitzgerald, E. A., Kuo, J. M., Xie, Y. H., Silverman, P. J. (1994) Necessity of Ga prelayers in GaAs/Ge growth using gas‐source molecular beam epitaxy. Applied Physics Letters, 64 (6). 733-735 doi:10.1063/1.111049
Hansen, P. J., Strausser, Y. E., Erickson, A. N., Tarsa, E. J., Kozodoy, P., Brazel, E. G., Ibbetson, J. P., Mishra, U., Narayanamurti, V., DenBaars, S. P., Speck, J. S. (1998) Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition. Applied Physics Letters, 72 (18). 2247-2249 doi:10.1063/1.121268
Grillot, P. N., Ringel, S. A., Fitzgerald, E. A., Watson, G. P., Xie, Y. H. (1995) Electron trapping kinetics at dislocations in relaxed Ge0.3Si0.7/Si heterostructures. Journal of Applied Physics, 77 (7). 3248-3256 doi:10.1063/1.358678
 
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