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(1994, July) Applied Physics Letters Vol. 65 (3) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1994 (July)Volume65
Issue<   3   >
PublisherAIP Publishing
Mindat Ref. ID8510903Long-form Identifiermindat:1:5:8510903:8
GUID0
Full Reference(1994, July) Applied Physics Letters Vol. 65 (3) AIP Publishing
Plain Text(1994, July) Applied Physics Letters Vol. 65 (3) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 65. AIP Publishing

Contains

Vakhshoori, Daryoosh (1994) Symmetry considerations in vertical‐cavity surface‐emitting lasers: Prediction of removal of polarization isotropicity on (001) substrates. Applied Physics Letters, 65 (3). 259-261 doi:10.1063/1.112410
Malliaras, G. G., Krasnikov, V. V., Bolink, H. J., Hadziioannou, G. (1994) Photorefractive polymer composite with net gain and subsecond response at 633 nm. Applied Physics Letters, 65 (3). 262-264 doi:10.1063/1.112411
Hubbard, S. F., Singer, K. D., Li, F., Cheng, S. Z. D., Harris, F. W. (1994) Nonlinear optical studies of a fluorinated poled polyimide guest‐host system. Applied Physics Letters, 65 (3). 265-267 doi:10.1063/1.112412
Petrov, V., Seifert, F., Noack, F. (1994) High repetition rate traveling wave optical parametric generator producing nearly bandwidth limited 50 fs infrared light pulses. Applied Physics Letters, 65 (3). 268-270 doi:10.1063/1.112367
Andersen, Peter E., Petersen, Paul M., Buchhave, Preben (1994) Crosstalk in dynamic optical interconnects in photorefractive crystals. Applied Physics Letters, 65 (3). 271-273 doi:10.1063/1.112368
Liu, Zi Dong, Bloch, Daniel, Ducloy, Martial (1994) Absolute active frequency locking of a diode laser with optical feedback generated by Doppler‐free collinear polarization spectroscopy. Applied Physics Letters, 65 (3). 274-276 doi:10.1063/1.112369
Mawatari, Hiroyasu, Iga, Ryuzu, Sugiura, Hideo, Tohmori, Yuichi, Yoshikuni, Yuzo (1994) Modulation‐doped GaInAs/GaInAsP strained multiple‐quantum‐well lasers grown by chemical beam epitaxy. Applied Physics Letters, 65 (3). 277-279 doi:10.1063/1.112371
Tackx, Peter, Kauranen, Martti, Persoons, AndrĂ© (1994) Distinction of two‐photon absorption from other nonlinear loss mechanisms by phase‐conjugate interferometry. Applied Physics Letters, 65 (3). 280-282 doi:10.1063/1.112375
Nakamura, S., Tajima, K., Sugimoto, Y. (1994) Experimental investigation on high‐speed switching characteristics of a novel symmetric Mach–Zehnder all‐optical switch. Applied Physics Letters, 65 (3). 283-285 doi:10.1063/1.112347
Scott, S. W. C., Rogozinski, K., Seguin, H. J. J. (1994) High peak power, burst mode operation of a multikilowatt CO2laser for deep penetration welding. Applied Physics Letters, 65 (3). 286-288 doi:10.1063/1.112348
Park, Soo Young, Cho, Hyun‐Nam, Kim, Nakjoong, Park, Jong‐Wook, Jin, Sung‐Ho, Choi, Sam‐Kwon, Wada, Tatsuo, Sasabe, Hiroyuki (1994) Third‐order optical nonlinearity of conjugated poly(4,4‐disubstituted‐1,6‐heptadiyne)s. Applied Physics Letters, 65 (3). 289-291 doi:10.1063/1.112349
Graham, R. J., Shaapur, F., Kato, Y., Stoner, B. R. (1994) Imaging of boron dopant in highly oriented diamond films by cathodoluminescence in a transmission electron microscope. Applied Physics Letters, 65 (3). 292-294 doi:10.1063/1.112350
Nazeri, Azar (1994) Crystallization of sol‐gel deposited potassium‐tantalate‐niobate thin films on platinum. Applied Physics Letters, 65 (3). 295-297 doi:10.1063/1.112351
Chen, Xiangli, Mazumder, Jyoti (1994) In situlaser‐induced fluorescence studies of laser chemical vapor deposition of TiN thin films. Applied Physics Letters, 65 (3). 298-300 doi:10.1063/1.112352
Calabrese, R., Guidi, V., Lenisa, P., Maciga, B., Ciullo, G., Della Mea, G., Egeni, G. P., Lamanna, G., Rigato, V., Rudello, V., Yang, B., Zandolin, S., Tecchio, L. (1994) Surface analysis of a GaAs electron source using Rutherford backscattering spectroscopy. Applied Physics Letters, 65 (3). 301-302 doi:10.1063/1.112353
Chen, Y. L., Qi, M., Wu, J. S., Wang, D. H., Yang, D. Z. (1994) Mechanical alloying process of the zirconia–8 mol % yttria ceramic powder. Applied Physics Letters, 65 (3). 303-305 doi:10.1063/1.113022
Battaglia, A., Coffa, S., Priolo, F., Spinella, C. (1994) Defect accumulation during ion irradiation of crystalline Si probed byinsituconductivity measurements. Applied Physics Letters, 65 (3). 306-308 doi:10.1063/1.112354
Cahill, David G., Allen, Thomas H. (1994) Thermal conductivity of sputtered and evaporated SiO2and TiO2optical coatings. Applied Physics Letters, 65 (3). 309-311 doi:10.1063/1.112355
Rogers, John A., Dhar, Lisa, Nelson, Keith A. (1994) Noncontact determination of transverse isotropic elastic moduli in polyimide thin films using a laser based ultrasonic method. Applied Physics Letters, 65 (3). 312-314 doi:10.1063/1.112356
Smith, R. G., Biery, G. A., Rodbell, K. P. (1994) 1/fnoise and electromigration in aluminum films: The role of film microstructure and texture. Applied Physics Letters, 65 (3). 315-317 doi:10.1063/1.112357
Michaelsen, C., Oehring, M., Bormann, R. (1994) Inverse melting of a metastable Nb45Cr55solid solution. Applied Physics Letters, 65 (3). 318-320 doi:10.1063/1.112358
Stevens, K. S., Ohtani, A., Kinniburgh, M., Beresford, R. (1994) Microstructure of AlN on Si (111) grown by plasma‐assisted molecular beam epitaxy. Applied Physics Letters, 65 (3). 321-323 doi:10.1063/1.112359
Kringho/j, Per, Elliman, Robert G. (1994) Diffusion of ion implanted Sn in Si, Si1−xGex, and Ge. Applied Physics Letters, 65 (3). 324-326 doi:10.1063/1.112360
Hull, R., Bean, J. C., Peticolas, L. J., Weir, B. E., Prabhakaran, K., Ogino, T. (1994) Misfit dislocation propagation kinetics in GexSi1−x/Ge(100) heterostructures. Applied Physics Letters, 65 (3). 327-329 doi:10.1063/1.113023
Khatri, R., Asoka‐Kumar, P., Nielsen, B., Roellig, L. O., Lynn, K. G. (1994) Kinetics of hydrogen interaction with SiO2‐Si interface trap centers. Applied Physics Letters, 65 (3). 330-332 doi:10.1063/1.112361
Piao, Z. S., Jeon, H. I., Cha, S. S., Lim, K. Y., Suh, E.‐K., Lee, H. J. (1994) Intensity variation of photoluminescence in InxGa1−xAs/GaAs multi‐quantum‐well structures. Applied Physics Letters, 65 (3). 333-335 doi:10.1063/1.112362
Wang, S. M., Thordson, J. V., Andersson, T. G., Jiang, S., Yang, L. X., Shen, S. C. (1994) Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells. Applied Physics Letters, 65 (3). 336-337 doi:10.1063/1.112363
Bhat, R., Koza, M. A., Song, J.‐I., Schwarz, S. A., Caneau, C., Hong, W.‐P. (1994) Reduction of zinc diffusion into the collector of InP‐based double heterojunction bipolar transistors grown by organometallic chemical vapor deposition. Applied Physics Letters, 65 (3). 338-340 doi:10.1063/1.112364
Sallese, J. M., Taylor, S., BĂŒhlmann, H. J., Carlin, J. F., Rudra, A., HoudrĂ©, R., Ilegems, M. (1994) As/P interdiffusion in ultrathin InAs/InP strained quantum wells. Applied Physics Letters, 65 (3). 341-343 doi:10.1063/1.112365
Hsu, J. W. P., Fitzgerald, E. A., Xie, Y. H., Silverman, P. J. (1994) Near‐field scanning optical microscopy imaging of individual threading dislocations on relaxed GexSi1−xfilms. Applied Physics Letters, 65 (3). 344-346 doi:10.1063/1.112366
Druijf, K. G., de Nijs, J. M. M., Drift, E. V. D., Granneman, E. H. A., Balk, P. (1994) Nature of defects in the Si‐SiO2system generated by vacuum‐ultraviolet irradiation. Applied Physics Letters, 65 (3). 347-349 doi:10.1063/1.112971
Lee, D. M., Rozgonyi, G. A. (1994) Low‐temperature gettering of trace iron and copper by misfit dislocations in Si/Si(Ge) epitaxy. Applied Physics Letters, 65 (3). 350-352 doi:10.1063/1.112370
Ellin, H. C., Grunnet‐Jepsen, A., Solymar, L. (1994) Generation and inhibition of domain movement in semi‐insulating GaAs:Cr. Applied Physics Letters, 65 (3). 353-355 doi:10.1063/1.112372
Shitara, Tomoya, Eberl, Karl (1994) Electronic properties of InGaP grown by solid‐source molecular‐beam epitaxy with a GaP decomposition source. Applied Physics Letters, 65 (3). 356-358 doi:10.1063/1.112373
Gardner, Nathan F., Hartmann, Quesnell J., Stockman, Stephen A., Stillman, Gregory E., Baker, Judith E., Malin, Jay I., Hsieh, K. C. (1994) Semi‐insulating InP grown at low temperature by metalorganic chemical vapor deposition. Applied Physics Letters, 65 (3). 359-361 doi:10.1063/1.112374
Sarnelli, E., Chaudhari, P., Lee, W. Y., Esposito, E. (1994) Transport properties in Tl‐Ba‐Ca‐Cu‐O grain boundary junctions on SrTiO3bicrystal substrates. Applied Physics Letters, 65 (3). 362-364 doi:10.1063/1.112376
Fujii, Eiji, Tomozawa, Atsushi, Fujii, Satoru, Torii, Hideo, Takayama, Ryoichi (1994) Preparation of PbTiO3thin films by plasma‐enhanced metalorganic chemical vapor deposition. Applied Physics Letters, 65 (3). 365-367 doi:10.1063/1.112377
Moore, J. F., Strongin, D. R., Comita, P. B., Ruckman, M. W., Strongin, Myron (1994) Laser‐induced deposition of alumina from condensed layers of organoaluminum compounds and water. Applied Physics Letters, 65 (3). 368-370 doi:10.1063/1.112378
Fiegl, B., Kuhnert, R., Ben‐Chorin, M., Koch, F. (1994) Evidence for grain boundary hopping transport in polycrystalline diamond films. Applied Physics Letters, 65 (3). 371-373 doi:10.1063/1.112379
Averitt, R. D., Alford, J. M., Halas, N. J. (1994) High‐purity vapor phase purification of C60. Applied Physics Letters, 65 (3). 374-376 doi:10.1063/1.112380
Hoyer, R., Mangold, C., Fattinger, Ch., Heming, M., Danielzik, B., Otto, J., Lohmeyer, M. (1994) Erratum: ‘‘Highly sensitive interfacial mass detection using ultracompact waveguiding films’’ [Appl. Phys. Lett. 64, 2791 (1994)]. Applied Physics Letters, 65 (3). 377 doi:10.1063/1.113096
Gaber, Harald (1994) Comment on ‘‘Crystal growth of C60thin films on layered substrates’’ [Appl. Phys. Lett. 63, 2351 (1993)]. Applied Physics Letters, 65 (3). 378 doi:10.1063/1.112333
Tanigaki, Katsumi, Kuroshima, Sadanori, Fujita, Jun‐ichi, Ebbesen, Thomas W. (1994) Response to ‘‘Comment on ‘Crystal growth of C60thin films on layered substrates’ ’’ [Appl. Phys. Lett.65, 378 (1994)]. Applied Physics Letters, 65 (3). 379-380 doi:10.1063/1.112334

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