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Gardner, Nathan F., Hartmann, Quesnell J., Stockman, Stephen A., Stillman, Gregory E., Baker, Judith E., Malin, Jay I., Hsieh, K. C. (1994) Semi‐insulating InP grown at low temperature by metalorganic chemical vapor deposition. Applied Physics Letters, 65 (3). 359-361 doi:10.1063/1.112374

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Reference TypeJournal (article/letter/editorial)
TitleSemi‐insulating InP grown at low temperature by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsGardner, Nathan F.Author
Hartmann, Quesnell J.Author
Stockman, Stephen A.Author
Stillman, Gregory E.Author
Baker, Judith E.Author
Malin, Jay I.Author
Hsieh, K. C.Author
Year1994 (July 18)Volume65
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.112374Search in ResearchGate
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Mindat Ref. ID8510963Long-form Identifiermindat:1:5:8510963:0
GUID0
Full ReferenceGardner, Nathan F., Hartmann, Quesnell J., Stockman, Stephen A., Stillman, Gregory E., Baker, Judith E., Malin, Jay I., Hsieh, K. C. (1994) Semi‐insulating InP grown at low temperature by metalorganic chemical vapor deposition. Applied Physics Letters, 65 (3). 359-361 doi:10.1063/1.112374
Plain TextGardner, Nathan F., Hartmann, Quesnell J., Stockman, Stephen A., Stillman, Gregory E., Baker, Judith E., Malin, Jay I., Hsieh, K. C. (1994) Semi‐insulating InP grown at low temperature by metalorganic chemical vapor deposition. Applied Physics Letters, 65 (3). 359-361 doi:10.1063/1.112374
In(1994, July) Applied Physics Letters Vol. 65 (3) AIP Publishing

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Gardner, Nathan F., Hartmann, Quesnell J., Baker, Judith E., Stillman, Gregory E. (1995) Effect of growth temperature on the electrical properties of CCl4‐doped semi‐insulating InP. Applied Physics Letters, 67 (20). 3004-3006 doi:10.1063/1.114933
Hartmann, Q. J., Gardner, N. F., Horton, T. U., Curtis, A. P., Ahmari, D. A., Fresina, M. T., Baker, J. E., Stillman, G. E. (1997) Semi-insulating In0.49Ga0.51P grown at reduced substrate temperature by low-pressure metalorganic chemical vapor deposition. Applied Physics Letters, 70 (14). 1822-1824 doi:10.1063/1.118702
Stockman, S. A., Fresina, M. T., Hartmann, Q. J., Hanson, A. W., Gardner, N. F., Baker, J. E., Stillman, G. E. (1994) Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors. Journal of Applied Physics, 75 (8). 4233-4236 doi:10.1063/1.356011
Cunningham, B. T., Baker, J. E., Stockman, S. A., Stillman, G. E. (1990) Absence of13C incorporation in13CCl4‐doped InP grown by metalorganic chemical vapor deposition. Applied Physics Letters, 56 (18). 1760-1762 doi:10.1063/1.103092
Stockman, S. A., Höfler, G. E., Baillargeon, J. N., Hsieh, K. C., Cheng, K. Y., Stillman, G. E. (1992) Characterization of heavily carbon‐doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy. Journal of Applied Physics, 72 (3). 981-987 doi:10.1063/1.351776
Stockman, S. A., Hanson, A. W., Jackson, S. L., Baker, J. E., Stillman, G. E. (1993) Effect of post‐growth cooling ambient on acceptor passivation in carbon‐doped GaAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 62 (11). 1248-1250 doi:10.1063/1.108748
Cunningham, B. T., Baker, J. E., Stillman, G. E. (1990) Carbon tetrachloride doped AlxGa1−xAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 56 (9). 836-838 doi:10.1063/1.103321
Sanada, T., Nakai, K., Wakao, K., Kuno, M., Yamakoshi, S. (1987) Planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (14). 1054-1056 doi:10.1063/1.98789
Bose, S. S., Szafranek, I., Kim, M. H., Stillman, G. E. (1990) Residual acceptor impurities in undoped high‐purity InP grown by metalorganic chemical vapor deposition. Applied Physics Letters, 56 (8). 752-754 doi:10.1063/1.102702
Fresina, Michael T., Hartmann, Quesnell J., Ahmari, David A., Gardner, Nathan F., Stillman, Gregory E. (1995) Analysis of the offset voltage of InGaP/GaAs single‐, double‐, and composite double‐heterojunction bipolar transistors. Journal of Applied Physics, 77 (10). 5437-5439 doi:10.1063/1.359237
Macrander, A. T., Long, J. A., Riggs, V. G., Bloemeke, A. F., Johnston, W. D. (1984) Electrical characterization of Fe‐doped semi‐insulating InP grown by metalorganic chemical vapor deposition. Applied Physics Letters, 45 (12). 1297-1298 doi:10.1063/1.95124
 
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