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Mitsuhara, Manabu, Ogasawara, Matsuyuki, Oishi, Mamoru, Sugiura, Hideo (1998) Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength. Applied Physics Letters, 72 (24). 3106-3108 doi:10.1063/1.121561

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Reference TypeJournal (article/letter/editorial)
TitleMetalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength
JournalApplied Physics Letters
AuthorsMitsuhara, ManabuAuthor
Ogasawara, MatsuyukiAuthor
Oishi, MamoruAuthor
Sugiura, HideoAuthor
Year1998 (June 15)Volume72
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.121561Search in ResearchGate
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Mindat Ref. ID8521289Long-form Identifiermindat:1:5:8521289:1
GUID0
Full ReferenceMitsuhara, Manabu, Ogasawara, Matsuyuki, Oishi, Mamoru, Sugiura, Hideo (1998) Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength. Applied Physics Letters, 72 (24). 3106-3108 doi:10.1063/1.121561
Plain TextMitsuhara, Manabu, Ogasawara, Matsuyuki, Oishi, Mamoru, Sugiura, Hideo (1998) Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength. Applied Physics Letters, 72 (24). 3106-3108 doi:10.1063/1.121561
In(1998, June) Applied Physics Letters Vol. 72 (24) AIP Publishing

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Sugiura, Hideo, Ogasawara, Matsuyuki, Mitsuhara, Manabu, Oohashi, Hiromi, Amano, Toshimasa (1996) Metalorganic molecular beam epitaxy of strain‐compensated InAsP/InGaAsP multi‐quantum‐well lasers. Journal of Applied Physics, 79 (3). 1233-1237 doi:10.1063/1.361016
Sugiura, Hideo, Mitsuhara, Manabu, Ogasawara, Matsuyuki, Itoh, Masayuki, Kamada, Hidehiko (1997) Structural and optical properties of 1.3 μm wavelength tensile-strained InGaAsP multiquantum wells grown by metalorganic molecular beam epitaxy. Journal of Applied Physics, 81 (3). 1427-1433 doi:10.1063/1.364180
Sugiura, Hideo, Itoh, Masayuki, Yamamoto, Norio, Ogasawara, Matsuyuki, Kishi, Kennji, Kondo, Yasuhiro (1996) Metalorganic molecular beam epitaxy of 1.3 μm wavelength tensile‐strained InGaAsP multi‐quantum‐well lasers. Applied Physics Letters, 68 (23). 3213-3215 doi:10.1063/1.116440
Sato, Tomonari, Mitsuhara, Manabu, Watanabe, Takao, Kondo, Yasuhiro (2005) Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy. Applied Physics Letters, 87 (21). 211903pp. doi:10.1063/1.2133920
Mitsuhara, Manabu, Ogasawara, Matsuyuki, Sugiura, Hideo (1998) Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl-beryllium. Journal of Crystal Growth, 183 (1). 38-42 doi:10.1016/s0022-0248(97)00336-9
Sugiura, Hideo, Noguchi, Yoshio, Iga, Ryuzo, Yamada, Takeshi, Kamada, Hidehiko, Sakai, Yoshihisa, Yasaka, Hiroshi (1992) Strained‐layer InGaAs quantum well lasers emitting at 1.5 μm grown by chemical beam epitaxy. Applied Physics Letters, 61 (3). 318-320 doi:10.1063/1.108477
Mitsuhara, Manabu, Ogasawara, Matsuyuki, Sugiura, Hideo (2000) Effect of strain in the barrier layer on structural and optical properties of highly strained In0.77Ga0.23As/InGaAs multiple quantum wells. Journal of Crystal Growth, 210 (4). 463-470 doi:10.1016/s0022-0248(99)00838-6
Sugiura, Hideo, Mitsuhara, Manabu, Oohashi, Hiromi, Hirono, Takuo, Nakashima, Kiichi (1995) Metalorganic molecular beam epitaxy of strained multi-quantum-wells for 1.3 μm wavelength laser diodes. Journal of Crystal Growth, 147 (1). 1-7 doi:10.1016/0022-0248(94)00650-4
Itoh, Masayuki, Sugiura, Hideo, Yasaka, Hiroshi, Kondo, Yasuhiro, Kishi, Kenji, Fukuda, Mitsuo, Itaya, Yoshio (1998) Differential gain and threshold current of 1.3 μm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth. Applied Physics Letters, 72 (13). 1553-1555 doi:10.1063/1.121112
Sugiura, Hideo, Mitsuhara, Manabu, Kondo, Susumu (1998) Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide. Applied Physics Letters, 73 (17). 2482-2484 doi:10.1063/1.122489
Yamada, Takeshi, Iga, Ryuzo, Noguchi, Yoshio, Sugiura, Hideo (1991) Low-Threshold InGaAs/InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1741
 
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