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Sato, Tomonari, Mitsuhara, Manabu, Watanabe, Takao, Kondo, Yasuhiro (2005) Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy. Applied Physics Letters, 87 (21). 211903pp. doi:10.1063/1.2133920

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Reference TypeJournal (article/letter/editorial)
TitleSurfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsSato, TomonariAuthor
Mitsuhara, ManabuAuthor
Watanabe, TakaoAuthor
Kondo, YasuhiroAuthor
Year2005 (November 21)Volume87
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.2133920Search in ResearchGate
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Mindat Ref. ID8545148Long-form Identifiermindat:1:5:8545148:1
GUID0
Full ReferenceSato, Tomonari, Mitsuhara, Manabu, Watanabe, Takao, Kondo, Yasuhiro (2005) Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy. Applied Physics Letters, 87 (21). 211903pp. doi:10.1063/1.2133920
Plain TextSato, Tomonari, Mitsuhara, Manabu, Watanabe, Takao, Kondo, Yasuhiro (2005) Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy. Applied Physics Letters, 87 (21). 211903pp. doi:10.1063/1.2133920
In(2005, November) Applied Physics Letters Vol. 87 (21) AIP Publishing

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Sato, Tomonari, Mitsuhara, Manabu, Kondo, Yasuhiro (2010) Sb surfactant-mediated growth of strained InGaAs multiple-quantum wells by metalorganic vapor phase epitaxy at low growth temperatures. Journal of Crystal Growth, 312 (3). 359-362 doi:10.1016/j.jcrysgro.2009.11.003
Mitsuhara, Manabu, Ogasawara, Matsuyuki, Oishi, Mamoru, Sugiura, Hideo (1998) Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength. Applied Physics Letters, 72 (24). 3106-3108 doi:10.1063/1.121561
Sato, Tomonari, Mitsuhara, Manabu, Iga, Ryuzo, Kanazawa, Shigeru, Inoue, Yasuyuki (2011) Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 315 (1). 64-67 doi:10.1016/j.jcrysgro.2010.08.029
Sugiura, Hideo, Kondo, Susum, Mitsuhara, Manabu, Matsumoto, Shinichi, Itoh, Masayuki (1997) Be–Zn interdiffusion and its influence on InGaAsP lasers fabricated by hybrid growth of chemical beam epitaxy and metalorganic vapor phase epitaxy. Applied Physics Letters, 70 (21). 2846-2848 doi:10.1063/1.119053
Fukano, Hideki, Sato, Tomonari, Mitsuhara, Manabu, Kondo, Yasuhiro, Yasaka, Hiroshi (2008) InP/InGaAs Heterojunction Phototransistor Operating at Wavelengths above 2 µm Realized Using Strained InAs/InGaAs Multiquantum Well Absorption Layer. Japanese Journal of Applied Physics, 47 (10) 7909-7914 doi:10.1143/jjap.47.7909
Mitsuhara, Manabu, Sato, Tomonari, Yamamoto, Norio, Fukano, Hideki, Kondo, Yasuhiro (2009) Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony. Journal of Crystal Growth, 311 (14). 3636-3639 doi:10.1016/j.jcrysgro.2009.06.011
Kondo, Y., Sato, K., Yamamoto, M. (1993) Self‐aligned buried‐heterostructure lasers grown entirely by metalorganic vapor phase epitaxy. Applied Physics Letters, 62 (11). 1188-1190 doi:10.1063/1.108729
Coblentz, D., Tanbun‐Ek, T., Logan, R. A., Sergent, A. M., Chu, S. N. G., Davisson, P. S. (1991) Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 59 (4). 405-407 doi:10.1063/1.105445
Tran, Chuong A., Osinski, A., Karlicek, R. F., Berishev, I. (1999) Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Applied Physics Letters, 75 (11). 1494-1496 doi:10.1063/1.124733
Sugiura, Hideo, Ogasawara, Matsuyuki, Mitsuhara, Manabu, Oohashi, Hiromi, Amano, Toshimasa (1996) Metalorganic molecular beam epitaxy of strain‐compensated InAsP/InGaAsP multi‐quantum‐well lasers. Journal of Applied Physics, 79 (3). 1233-1237 doi:10.1063/1.361016
Joma, M., Horikawa, H., Matsui, Y., Kamijoh, T. (1991) High‐power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 58 (20). 2220-2222 doi:10.1063/1.104932
 
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