Reference Type | Journal (article/letter/editorial) |
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Title | Characteristics of high quality tantalum oxide films deposited by photoinduced chemical vapor deposition |
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Journal | Applied Physics Letters |
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Authors | Zhang, Jun-Ying | Author |
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Lim, Boon | Author |
Boyd, Ian W. | Author |
Dusastre, Vincent | Author |
Year | 1998 (October 19) | Volume | 73 |
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Issue | 16 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.121803Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8522078 | Long-form Identifier | mindat:1:5:8522078:4 |
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GUID | 0 |
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Full Reference | Zhang, Jun-Ying, Lim, Boon, Boyd, Ian W., Dusastre, Vincent (1998) Characteristics of high quality tantalum oxide films deposited by photoinduced chemical vapor deposition. Applied Physics Letters, 73 (16). 2299-2301 doi:10.1063/1.121803 |
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Plain Text | Zhang, Jun-Ying, Lim, Boon, Boyd, Ian W., Dusastre, Vincent (1998) Characteristics of high quality tantalum oxide films deposited by photoinduced chemical vapor deposition. Applied Physics Letters, 73 (16). 2299-2301 doi:10.1063/1.121803 |
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In | (1998, October) Applied Physics Letters Vol. 73 (16) AIP Publishing |
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