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Kurobe, T., Sekiguchi, Y., Suda, J., Yoshimoto, M., Matsunami, H. (1998) Preferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy. Applied Physics Letters, 73 (16). 2305-2307 doi:10.1063/1.121805

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Reference TypeJournal (article/letter/editorial)
TitlePreferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy
JournalApplied Physics Letters
AuthorsKurobe, T.Author
Sekiguchi, Y.Author
Suda, J.Author
Yoshimoto, M.Author
Matsunami, H.Author
Year1998 (October 19)Volume73
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.121805Search in ResearchGate
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Mindat Ref. ID8522080Long-form Identifiermindat:1:5:8522080:9
GUID0
Full ReferenceKurobe, T., Sekiguchi, Y., Suda, J., Yoshimoto, M., Matsunami, H. (1998) Preferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy. Applied Physics Letters, 73 (16). 2305-2307 doi:10.1063/1.121805
Plain TextKurobe, T., Sekiguchi, Y., Suda, J., Yoshimoto, M., Matsunami, H. (1998) Preferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy. Applied Physics Letters, 73 (16). 2305-2307 doi:10.1063/1.121805
In(1998, October) Applied Physics Letters Vol. 73 (16) AIP Publishing

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Suda, J., Kurobe, T., Masuda, T., Matsunami, H. (1999) Preferential Growth Mode of Cubic GaN by Metalorganic Molecular Beam Epitaxy on Sapphire (0001) Substrates. physica status solidi (a), 176 (1). 503-507 doi:10.1002/(sici)1521-396x(199911)176:1<503::aid-pssa503>3.0.co;2-1
Suda, Jun, Kurobe, Tatsuro, Matsunami, Hiroyuki (1999) Growth evolution of cubic-GaN on sapphire (0001) substrate by metalorganic molecular beam epitaxy. Journal of Crystal Growth, 201. 437-440 doi:10.1016/s0022-0248(98)01370-0
Suda, Jun, Kurobe, Tatsuro, Nakamura, Shigeru, Matsunami, Hiroyuki (2000) Selective Area Growth of Cubic GaN on 3C-SiC (001) by Metalorganic Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 39. doi:10.1143/jjap.39.l1081
Yoshimoto, M, Hatanaka, A, Itoh, H, Matsunami, H (1998) GaN growth on sapphire and 6H-SiC by metalorganic molecular beam epitaxy. Journal of Crystal Growth, 188 (1). 92-97 doi:10.1016/s0022-0248(98)00063-3
Lin, M. E., Sverdlov, B. N., Morkoç, H. (1993) Growth and characterization of GaN on c‐plane (0001) sapphire substrates by plasma‐enhanced molecular beam epitaxy. Journal of Applied Physics, 74 (8). 5038-5041 doi:10.1063/1.354285
Alloing, B., Vézian, S., Tottereau, O., VennéguÚs, P., Beraudo, E., Zuniga-Pérez, J. (2011) On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy. Applied Physics Letters, 98 (1). 11914pp. doi:10.1063/1.3525170
He, L., Moon, Y. T., Xie, J., Muñoz, M., Johnstone, D., Morkoç, H. (2006) Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy. Applied Physics Letters, 88 (7). 71901pp. doi:10.1063/1.2166478
Shen, X. Q., Okumura, H., Furuta, K., Nakamura, N. (2006) Electrical properties of AlGaN∕GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy. Applied Physics Letters, 89 (17). 171906pp. doi:10.1063/1.2364864
Suda, J., Matsunami, H. (2002) Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxy. Journal of Crystal Growth, 237. 1114-1117 doi:10.1016/s0022-0248(01)02065-6
Birkhahn, R., Steckl, A. J. (1998) Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates. Applied Physics Letters, 73 (15). 2143-2145 doi:10.1063/1.122404
Crumbaker, T. E., Lee, H. Y., Hafich, M. J., Robinson, G. Y. (1989) Growth of InP on Si substrates by molecular beam epitaxy. Applied Physics Letters, 54 (2). 140-142 doi:10.1063/1.101209
 
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