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Nakamura, M., Ishiwari, S., Tanaka, A. (1998) Number of Cu atom(s) in the 1.014 eV photoluminescence copper center and the center’s model in silicon crystal. Applied Physics Letters, 73 (16). 2325-2327 doi:10.1063/1.121811

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Reference TypeJournal (article/letter/editorial)
TitleNumber of Cu atom(s) in the 1.014 eV photoluminescence copper center and the center’s model in silicon crystal
JournalApplied Physics Letters
AuthorsNakamura, M.Author
Ishiwari, S.Author
Tanaka, A.Author
Year1998 (October 19)Volume73
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.121811Search in ResearchGate
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Mindat Ref. ID8522086Long-form Identifiermindat:1:5:8522086:3
GUID0
Full ReferenceNakamura, M., Ishiwari, S., Tanaka, A. (1998) Number of Cu atom(s) in the 1.014 eV photoluminescence copper center and the center’s model in silicon crystal. Applied Physics Letters, 73 (16). 2325-2327 doi:10.1063/1.121811
Plain TextNakamura, M., Ishiwari, S., Tanaka, A. (1998) Number of Cu atom(s) in the 1.014 eV photoluminescence copper center and the center’s model in silicon crystal. Applied Physics Letters, 73 (16). 2325-2327 doi:10.1063/1.121811
In(1998, October) Applied Physics Letters Vol. 73 (16) AIP Publishing

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Nakamura, M. (1998) Dissociation of the 1.014 eV photoluminescence copper center in silicon crystal. Applied Physics Letters, 73 (26). 3896-3898 doi:10.1063/1.122928
Nakamura, Minoru, Murakami, Susumu (2011) Depth progression of dissociation reaction of the 1.014-eV photoluminescence copper center in copper-diffused silicon crystal measured by deep-level transient spectroscopy. Applied Physics Letters, 98 (14). 141909pp. doi:10.1063/1.3575574
Nakamura, Minoru, Murakami, Susumu (2012) Deep-level transient spectroscopy and photoluminescence measurements of dissociation energy of the 1.014-eV copper center in copper-diffused silicon crystal. Journal of Applied Physics, 111 (7). 73512pp. doi:10.1063/1.3699366
Nakamura, Minoru, Ohno, Hideki, Murakami, Susumu (2004) Formation of the 1.014 eV Photoluminescence Cu Center in Cu-implanted Silicon Crystals and the Center's Model. Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l1466
Nakamura, Minoru, Murakami, Susumu, Udono, Haruhiko (2013) Energy level(s) of the dissociation product of the 1.014 eV photoluminescence copper center in n-type silicon determined by photoluminescence and deep-level transient spectroscopy. Journal of Applied Physics, 114 (3). 33508pp. doi:10.1063/1.4813878
Nakamura, Minoru (2000) Influences of Oxygen and Carbon on the Formation of the 1.014 eV Photoluminescence Copper Center in Silicon Crystal. Journal of the Electrochemical Society, 147. 796pp. doi:10.1149/1.1393274
Nakamura, M., Nagai, S., Aoki, Y., Naramoto, H. (1998) Oxygen participation in the formation of the photoluminescence W center and the center’s origin in ion-implanted silicon crystals. Applied Physics Letters, 72 (11). 1347-1349 doi:10.1063/1.120990
Nakamura, Minoru (2002) Formation of the photoluminescence Cu center on in-diffusion and out-diffusion of Cu in dilute Cu-contaminated silicon crystals. Journal of Applied Physics, 92 (11). 6625-6629 doi:10.1063/1.1521515
Tanaka, Satoshi, Koyama, Hideki, Koshida, Nobuyoshi (1998) Photoluminescence decay dynamics of ion-irradiated porous silicon: Evidence for the absence of carrier migration. Applied Physics Letters, 73 (16). 2334-2336 doi:10.1063/1.122453
Okhonin, S., Fazan, P. (1998) Origin of the charge to breakdown distributions in thin silicon dioxide films. Applied Physics Letters, 73 (16). 2343-2344 doi:10.1063/1.121686
Nakamura, Minoru (2001) Order of the Formation Reaction and the Origin of the Photoluminescence W Center in Silicon Crystal. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l1000
 
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