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Reichert, H., Moss, S. C., Imperatori, P., Evans-Lutterodt, K. (1999) Metastable surface ordering in strain relaxed Si0.5Ge0.5 epitaxial layers grown at high temperature. Applied Physics Letters, 74 (4). 531-533 doi:10.1063/1.123177

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Reference TypeJournal (article/letter/editorial)
TitleMetastable surface ordering in strain relaxed Si0.5Ge0.5 epitaxial layers grown at high temperature
JournalApplied Physics Letters
AuthorsReichert, H.Author
Moss, S. C.Author
Imperatori, P.Author
Evans-Lutterodt, K.Author
Year1999 (January 25)Volume74
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.123177Search in ResearchGate
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Mindat Ref. ID8524062Long-form Identifiermindat:1:5:8524062:7
GUID0
Full ReferenceReichert, H., Moss, S. C., Imperatori, P., Evans-Lutterodt, K. (1999) Metastable surface ordering in strain relaxed Si0.5Ge0.5 epitaxial layers grown at high temperature. Applied Physics Letters, 74 (4). 531-533 doi:10.1063/1.123177
Plain TextReichert, H., Moss, S. C., Imperatori, P., Evans-Lutterodt, K. (1999) Metastable surface ordering in strain relaxed Si0.5Ge0.5 epitaxial layers grown at high temperature. Applied Physics Letters, 74 (4). 531-533 doi:10.1063/1.123177
In(1999, January) Applied Physics Letters Vol. 74 (4) AIP Publishing

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Mooney, P. M., Tilly, L., D’Emic, C. P., Chu, J. O., Cardone, F., LeGoues, F. K., Meyerson, B. S. (1997) Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature. Journal of Applied Physics, 82 (2). 688-695 doi:10.1063/1.365599
Mooney, P. M., Jordan-Sweet, J. L., Noyan, I. C., Kaldor, S. K., Wang, P.-C. (1999) Observation of local tilted regions in strain-relaxed SiGe/Si buffer layers using x-ray microdiffraction. Applied Physics Letters, 74 (5). 726-728 doi:10.1063/1.123104
Wang, G. W. (1991) Strain‐relaxed epitaxial layers for high‐speed electronic devices. Applied Physics Letters, 59 (5). 573-575 doi:10.1063/1.105390
Lafontaine, H., Rowell, N. L., Janz, S. (1998) Phonon-resolved photoluminescence at λ=1.55 μm from undulating Si0.5Ge0.5 epitaxial layers. Applied Physics Letters, 72 (19). 2430-2432 doi:10.1063/1.121395
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Aluguri, R., Manna, S., Ray, S. K. (2013) Direct band gap optical emission from compressively strained Ge films grown on relaxed Si0.5Ge0.5 substrate. Applied Physics Letters, 103 (16). 161118pp. doi:10.1063/1.4826107
Kim, T. W., Bae, H. C., Park, H. L. (1999) Structural and optical properties of InSb epitaxial films grown on GaAs(100) substrates at low temperature. Applied Physics Letters, 74 (3). 380-382 doi:10.1063/1.123077
Imperatori, P., Evans-Lutterodt, K., Ippoliti, A., Capozi, M., Pedio, M., Felici, R. (1998) X-ray diffraction studies of epitaxial Sn induced reconstructions on Si(100) surfaces. Applied Surface Science, 123. 636-640 doi:10.1016/s0169-4332(97)00446-7
Gaiduk, P. I., Larsen, A. Nylandsted, Hansen, J. Lundsgaard, Trautmann, C., Toulemonde, M. (2003) Discontinuous tracks in relaxed Si0.5Ge0.5 alloy layers: A velocity effect. Applied Physics Letters, 83 (9). 1746-1748 doi:10.1063/1.1605240
Anayama, C., Tanahashi, T., Kuwatsuka, H., Nishiyama, S., Isozumi, S., Nakajima, K. (1990) High‐purity GaSb epitaxial layers grown from Sb‐rich solutions. Applied Physics Letters, 56 (3). 239-240 doi:10.1063/1.102842
Zytkiewicz, Z. R., Domagala, J. (1999) Thermal strain in GaAs layers grown by epitaxial lateral overgrowth on Si substrates. Applied Physics Letters, 75 (18). 2749-2751 doi:10.1063/1.125137
 
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