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An, Haiyan, Motohisa, Junichi (2000) Optical properties of InAs quantum dots formed on GaAs pyramids. Applied Physics Letters, 77 (3). 385-387 doi:10.1063/1.126984

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Reference TypeJournal (article/letter/editorial)
TitleOptical properties of InAs quantum dots formed on GaAs pyramids
JournalApplied Physics Letters
AuthorsAn, HaiyanAuthor
Motohisa, JunichiAuthor
Year2000 (July 17)Volume77
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.126984Search in ResearchGate
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Mindat Ref. ID8528073Long-form Identifiermindat:1:5:8528073:1
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Full ReferenceAn, Haiyan, Motohisa, Junichi (2000) Optical properties of InAs quantum dots formed on GaAs pyramids. Applied Physics Letters, 77 (3). 385-387 doi:10.1063/1.126984
Plain TextAn, Haiyan, Motohisa, Junichi (2000) Optical properties of InAs quantum dots formed on GaAs pyramids. Applied Physics Letters, 77 (3). 385-387 doi:10.1063/1.126984
In(2000, July) Applied Physics Letters Vol. 77 (3) AIP Publishing

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An, Haiyan, Motohisa, Junichi, Fukui, Takashi (2001) Optical Anisotropy in InAs Quantum Dots Formed on GaAs Pyramids. Japanese Journal of Applied Physics, 40. 2312-2316 doi:10.1143/jjap.40.2312
Garcı́a, J. M., Silveira, J. P., Briones, F. (2000) Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001). Applied Physics Letters, 77 (3). 409-411 doi:10.1063/1.126992
Wang, J. Z., Yang, Z., Yang, C. L., Wang, Z. G. (2000) Photoluminescence of InAs quantum dots grown on GaAs surface. Applied Physics Letters, 77 (18). 2837-2839 doi:10.1063/1.1320854
Mlinar, V., Peeters, F. M. (2006) Influence of the substrate orientation on the electronic and optical properties of InAs∕GaAs quantum dots. Applied Physics Letters, 89 (26). 261910pp. doi:10.1063/1.2424435
Andreev, A. D., O’Reilly, E. P. (2005) Optical matrix element in InAs∕GaAs quantum dots: Dependence on quantum dot parameters. Applied Physics Letters, 87 (21). 213106pp. doi:10.1063/1.2130378
Nataraj, Devaraj, Ooike, Noboru, Motohisa, Junichi, Fukui, Takashi (2005) Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy. Applied Physics Letters, 87 (19). 193103pp. doi:10.1063/1.2120905
Fafard, S. (2000) Near-surface InAs/GaAs quantum dots with sharp electronic shells. Applied Physics Letters, 76 (19). 2707-2709 doi:10.1063/1.126450
Miao, Z. L., Zhang, Y. W., Chua, S. J., Chye, Y. H., Chen, P., Tripathy, S. (2005) Optical properties of InAs∕GaAs surface quantum dots. Applied Physics Letters, 86 (3). 31914pp. doi:10.1063/1.1854199
Sanguinetti, S., Gurioli, M., Grilli, E., Guzzi, M., Henini, M. (2000) Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates. Applied Physics Letters, 77 (13). 1982-1984 doi:10.1063/1.1311814
Hahn, Cheol-Koo, Motohisa, Junichi, Fukui, Takashi (2000) Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy. Applied Physics Letters, 76 (26). 3947-3949 doi:10.1063/1.126830
Kim, Hyo Jin, Motohisa, Junichi, Fukui, Takashi (2002) Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates. Applied Physics Letters, 81 (27). 5147-5149 doi:10.1063/1.1534385
 
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