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Chu, R. M., Zhou, Y. G., Zheng, Y. D., Han, P., Shen, B., Gu, S. L. (2001) Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors. Applied Physics Letters, 79 (14). 2270-2272 doi:10.1063/1.1406978

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors
JournalApplied Physics Letters
AuthorsChu, R. M.Author
Zhou, Y. G.Author
Zheng, Y. D.Author
Han, P.Author
Shen, B.Author
Gu, S. L.Author
Year2001 (October)Volume79
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1406978Search in ResearchGate
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Mindat Ref. ID8530092Long-form Identifiermindat:1:5:8530092:9
GUID0
Full ReferenceChu, R. M., Zhou, Y. G., Zheng, Y. D., Han, P., Shen, B., Gu, S. L. (2001) Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors. Applied Physics Letters, 79 (14). 2270-2272 doi:10.1063/1.1406978
Plain TextChu, R. M., Zhou, Y. G., Zheng, Y. D., Han, P., Shen, B., Gu, S. L. (2001) Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors. Applied Physics Letters, 79 (14). 2270-2272 doi:10.1063/1.1406978
In(2001, October) Applied Physics Letters Vol. 79 (14) AIP Publishing

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