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Konofaos, N., Angelis, C. T., Evangelou, E. K., Dimitriadis, C. A., Logothetidis, S. (2001) Charge carrier response time in sputtered a-C/n-Si heterojunctions. Applied Physics Letters, 79 (15). 2381-2383 doi:10.1063/1.1404403

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Reference TypeJournal (article/letter/editorial)
TitleCharge carrier response time in sputtered a-C/n-Si heterojunctions
JournalApplied Physics Letters
AuthorsKonofaos, N.Author
Angelis, C. T.Author
Evangelou, E. K.Author
Dimitriadis, C. A.Author
Logothetidis, S.Author
Year2001 (October 8)Volume79
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.1404403Search in ResearchGate
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Mindat Ref. ID8530132Long-form Identifiermindat:1:5:8530132:6
GUID0
Full ReferenceKonofaos, N., Angelis, C. T., Evangelou, E. K., Dimitriadis, C. A., Logothetidis, S. (2001) Charge carrier response time in sputtered a-C/n-Si heterojunctions. Applied Physics Letters, 79 (15). 2381-2383 doi:10.1063/1.1404403
Plain TextKonofaos, N., Angelis, C. T., Evangelou, E. K., Dimitriadis, C. A., Logothetidis, S. (2001) Charge carrier response time in sputtered a-C/n-Si heterojunctions. Applied Physics Letters, 79 (15). 2381-2383 doi:10.1063/1.1404403
In(2001, October) Applied Physics Letters Vol. 79 (15) AIP Publishing

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Konofaos, N., Angelis, C. T., Evangelou, E. K., Panayiotatos, Y., Dimitriadis, C. A., Logothetidis, S. (2001) Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature. Applied Physics Letters, 78 (12). 1682-1684 doi:10.1063/1.1352658
Hastas, N. A., Dimitriadis, C. A., Tassis, D. H., Logothetidis, S. (2001) Electrical characterization of nanocrystalline carbon–silicon heterojunctions. Applied Physics Letters, 79 (5). 638-640 doi:10.1063/1.1390488
Evangelou, E. K., Konofaos, N., Aslanoglou, X. A., Dimitriadis, C. A., Patsalas, P., Logothetidis, S., Kokkoris, M., Kossionides, E., Vlastou, R., Groetschel, R. (2000) Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal–oxide–semiconductor devices. Journal of Applied Physics, 88 (12). 7192-7196 doi:10.1063/1.1322068
Evangelou, E., Konofaos, N., Logothetidis, S., Gioti, M. (1999) Electrical behaviour of metal/a-C/Si and metal/CN/Si devices. Carbon, 37. 871-876 doi:10.1016/s0008-6223(98)00288-7
Hastas, N. A., Dimitriadis, C. A., Tassis, D. H., Panayiotatos, Y., Logothetidis, S., Papadimitriou, D. (2001) Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure. Applied Physics Letters, 79 (20). 3269-3271 doi:10.1063/1.1419044
Konofaos, N., Evangelou, E. K., Logothetidis, S., Gioti, M. (2002) Electrical properties of carbon nitride films on silicon. Journal of Applied Physics, 91 (12). 9915pp. doi:10.1063/1.1479479
Konofaos, N., Evangelou, E., Logothetidis, S. (1999) Effect of the layered structure on the electronic properties of amorphous carbon films on n-Si. Journal of Applied Physics, 86 (8). 4446-4451 doi:10.1063/1.371384
Dimitriadis, C. A., Hastas, N. A., Vouroutzis, N., Logothetidis, S., Panayiotatos, Y. (2001) Microstructure and its effect on the conductivity of magnetron sputtered carbon thin films. Journal of Applied Physics, 89 (12). 7954-7959 doi:10.1063/1.1376413
Konofaos, N., Evangelou, E., Thomas, C. B. (1998) Device characterization for amorphous diamond-like carbon–silicon heterojunctions. Journal of Applied Physics, 84 (8). 4634-4636 doi:10.1063/1.368690
Hastas, N. A., Dimitriadis, C. A., Patsalas, P., Panayiotatos, Y., Tassis, D. H., Logothetidis, S. (2001) Structural, electrical, and low-frequency-noise properties of amorphous-carbon–silicon heterojunctions. Journal of Applied Physics, 89 (5). 2832-2838 doi:10.1063/1.1346654
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