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Konofaos, N., Evangelou, E. K., Logothetidis, S., Gioti, M. (2002) Electrical properties of carbon nitride films on silicon. Journal of Applied Physics, 91 (12). 9915pp. doi:10.1063/1.1479479

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties of carbon nitride films on silicon
JournalJournal of Applied Physics
AuthorsKonofaos, N.Author
Evangelou, E. K.Author
Logothetidis, S.Author
Gioti, M.Author
Year2002Volume91
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1479479Search in ResearchGate
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Mindat Ref. ID5113108Long-form Identifiermindat:1:5:5113108:7
GUID0
Full ReferenceKonofaos, N., Evangelou, E. K., Logothetidis, S., Gioti, M. (2002) Electrical properties of carbon nitride films on silicon. Journal of Applied Physics, 91 (12). 9915pp. doi:10.1063/1.1479479
Plain TextKonofaos, N., Evangelou, E. K., Logothetidis, S., Gioti, M. (2002) Electrical properties of carbon nitride films on silicon. Journal of Applied Physics, 91 (12). 9915pp. doi:10.1063/1.1479479
In(2002) Journal of Applied Physics Vol. 91 (12) AIP Publishing

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Logothetidis, S., Evangelou, E., Konofaos, N. (1997) Properties and density of states of the interface between silicon and carbon films rich in sp3 bonds. Journal of Applied Physics, 82 (10). 5017-5020 doi:10.1063/1.366402
Evangelou, E., Konofaos, N., Logothetidis, S., Gioti, M. (1999) Electrical behaviour of metal/a-C/Si and metal/CN/Si devices. Carbon, 37. 871-876 doi:10.1016/s0008-6223(98)00288-7
Konofaos, N., Evangelou, E., Logothetidis, S. (1999) Effect of the layered structure on the electronic properties of amorphous carbon films on n-Si. Journal of Applied Physics, 86 (8). 4446-4451 doi:10.1063/1.371384
Konofaos, N., Angelis, C. T., Evangelou, E. K., Panayiotatos, Y., Dimitriadis, C. A., Logothetidis, S. (2001) Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature. Applied Physics Letters, 78 (12). 1682-1684 doi:10.1063/1.1352658
Evangelou, E. K., Konofaos, N., Aslanoglou, X. A., Dimitriadis, C. A., Patsalas, P., Logothetidis, S., Kokkoris, M., Kossionides, E., Vlastou, R., Groetschel, R. (2000) Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal–oxide–semiconductor devices. Journal of Applied Physics, 88 (12). 7192-7196 doi:10.1063/1.1322068
Konofaos, N., Angelis, C. T., Evangelou, E. K., Dimitriadis, C. A., Logothetidis, S. (2001) Charge carrier response time in sputtered a-C/n-Si heterojunctions. Applied Physics Letters, 79 (15). 2381-2383 doi:10.1063/1.1404403
Laskarakis, A., Logothetidis, S., Gioti, M. (2001) Bonding structure of carbon nitride films by infrared ellipsometry. Physical Review B, 64 (12) doi:10.1103/physrevb.64.125419
Konofaos, N., Evangelou, E., Thomas, C. B. (1998) Device characterization for amorphous diamond-like carbon–silicon heterojunctions. Journal of Applied Physics, 84 (8). 4634-4636 doi:10.1063/1.368690
Wang, Zhongchun, Kugler, Veronika, Helmersson, Ulf, Konofaos, N., Evangelou, E. K., Nakao, Setsuo, Jin, Ping (2001) Electrical properties of SrTiO3 thin films on Si deposited by magnetron sputtering at low temperature. Applied Physics Letters, 79 (10). 1513-1515 doi:10.1063/1.1398321
Logothetidis, S., Lefakis, H., Gioti, M. (1998) Carbon nitride thin films prepared by reactive r.f. Magnetron sputtering. Carbon, 36. 757-760 doi:10.1016/s0008-6223(98)00073-6
Gioti, M., Logothetidis, S., Charitidis, C. (1998) Stress relaxation and stability in thick amorphous carbon films deposited in layer structure. Applied Physics Letters, 73 (2). 184-186 doi:10.1063/1.121749
 
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