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Logothetidis, S., Evangelou, E., Konofaos, N. (1997) Properties and density of states of the interface between silicon and carbon films rich in sp3 bonds. Journal of Applied Physics, 82 (10). 5017-5020 doi:10.1063/1.366402

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Reference TypeJournal (article/letter/editorial)
TitleProperties and density of states of the interface between silicon and carbon films rich in sp3 bonds
JournalJournal of Applied Physics
AuthorsLogothetidis, S.Author
Evangelou, E.Author
Konofaos, N.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366402Search in ResearchGate
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Mindat Ref. ID5087406Long-form Identifiermindat:1:5:5087406:0
GUID0
Full ReferenceLogothetidis, S., Evangelou, E., Konofaos, N. (1997) Properties and density of states of the interface between silicon and carbon films rich in sp3 bonds. Journal of Applied Physics, 82 (10). 5017-5020 doi:10.1063/1.366402
Plain TextLogothetidis, S., Evangelou, E., Konofaos, N. (1997) Properties and density of states of the interface between silicon and carbon films rich in sp3 bonds. Journal of Applied Physics, 82 (10). 5017-5020 doi:10.1063/1.366402
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Konofaos, N., Evangelou, E. K., Logothetidis, S., Gioti, M. (2002) Electrical properties of carbon nitride films on silicon. Journal of Applied Physics, 91 (12). 9915pp. doi:10.1063/1.1479479
Konofaos, N., Evangelou, E., Logothetidis, S. (1999) Effect of the layered structure on the electronic properties of amorphous carbon films on n-Si. Journal of Applied Physics, 86 (8). 4446-4451 doi:10.1063/1.371384
Konofaos, N., Angelis, C. T., Evangelou, E. K., Dimitriadis, C. A., Logothetidis, S. (2001) Charge carrier response time in sputtered a-C/n-Si heterojunctions. Applied Physics Letters, 79 (15). 2381-2383 doi:10.1063/1.1404403
Konofaos, N., Evangelou, E., Thomas, C. B. (1998) Device characterization for amorphous diamond-like carbon–silicon heterojunctions. Journal of Applied Physics, 84 (8). 4634-4636 doi:10.1063/1.368690
Evangelou, E., Konofaos, N., Logothetidis, S., Gioti, M. (1999) Electrical behaviour of metal/a-C/Si and metal/CN/Si devices. Carbon, 37. 871-876 doi:10.1016/s0008-6223(98)00288-7
Patsalas, P., Logothetidis, S. (2000) The effect of postgrowth ion irradiation on the microstructure and the interface properties of amorphous carbon films on silicon. Journal of Applied Physics, 88 (11). 6346-6354 doi:10.1063/1.1323751
Hastas, N. A., Dimitriadis, C. A., Tassis, D. H., Panayiotatos, Y., Logothetidis, S., Papadimitriou, D. (2001) Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure. Applied Physics Letters, 79 (20). 3269-3271 doi:10.1063/1.1419044
Konofaos, N., Angelis, C. T., Evangelou, E. K., Panayiotatos, Y., Dimitriadis, C. A., Logothetidis, S. (2001) Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature. Applied Physics Letters, 78 (12). 1682-1684 doi:10.1063/1.1352658
Konofaos, N., McClean, I. P., Thomas, C. B. (1997) Characterisation of the Interface States between Amorphous Diamond-Like Carbon Films and (100) Silicon. physica status solidi (a), 161 (1). 111-123 doi:10.1002/1521-396x(199705)161:1<111::aid-pssa111>3.0.co;2-u
Evangelou, E. K., Konofaos, N., Aslanoglou, X. A., Dimitriadis, C. A., Patsalas, P., Logothetidis, S., Kokkoris, M., Kossionides, E., Vlastou, R., Groetschel, R. (2000) Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal–oxide–semiconductor devices. Journal of Applied Physics, 88 (12). 7192-7196 doi:10.1063/1.1322068
Wang, Zhongchun, Kugler, Veronika, Helmersson, Ulf, Konofaos, N., Evangelou, E. K., Nakao, Setsuo, Jin, Ping (2001) Electrical properties of SrTiO3 thin films on Si deposited by magnetron sputtering at low temperature. Applied Physics Letters, 79 (10). 1513-1515 doi:10.1063/1.1398321
 
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