Vote for your favorite mineral in #MinCup25! - Jeremejevite vs. HaĂŒyne
Are you ready for a battle of the blues? In a match of newcomers, volcanic gem hauyne is taking on rare jeremejevite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Liu, J. F., Feng, J. Y., Zhu, J. (2002) Film thickness dependence of the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system. Applied Physics Letters, 80 (2). 270-272 doi:10.1063/1.1434311

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleFilm thickness dependence of the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system
JournalApplied Physics Letters
AuthorsLiu, J. F.Author
Feng, J. Y.Author
Zhu, J.Author
Year2002 (January 14)Volume80
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1434311Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8532018Long-form Identifiermindat:1:5:8532018:1
GUID0
Full ReferenceLiu, J. F., Feng, J. Y., Zhu, J. (2002) Film thickness dependence of the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system. Applied Physics Letters, 80 (2). 270-272 doi:10.1063/1.1434311
Plain TextLiu, J. F., Feng, J. Y., Zhu, J. (2002) Film thickness dependence of the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system. Applied Physics Letters, 80 (2). 270-272 doi:10.1063/1.1434311
In(2002, January) Applied Physics Letters Vol. 80 (2) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Liu, J. F., Feng, J. Y., Zhu, J. (2001) Comparison of the thermal stability of NiSi films in Ni/Pt/(111)Si and Ni/Pt/(100)Si systems. Journal of Applied Physics, 90 (2). 745-749 doi:10.1063/1.1379053
Liu, J. F., Chen, H. B., Feng, J. Y., Zhu, J. (2000) Improvement of the thermal stability of NiSi films by using a thin Pt interlayer. Applied Physics Letters, 77 (14). 2177-2179 doi:10.1063/1.1313815
Mangelinck, D., Dai, J. Y., Pan, J. S., Lahiri, S. K. (1999) Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition. Applied Physics Letters, 75 (12). 1736-1738 doi:10.1063/1.124803
Steenbeck, K., Habisreuther, T., Dubourdieu, C., SĂ©nateur, J. P. (2002) Magnetic anisotropy of ferromagnetic La0.7Sr0.3MnO3 epitaxial thin films: Dependence on temperature and film thickness. Applied Physics Letters, 80 (18). 3361-3363 doi:10.1063/1.1473870
Wang, R N, Feng, J Y (2003) Comparison of the thermal stabilities of NiSi films in Ni/Si, Ni/Pd/Si and Ni/Pt/Si systems. Journal of Physics: Condensed Matter, 15 (12). 1935-1942 doi:10.1088/0953-8984/15/12/310
Batstone, J. L., Gibson, J. M., Tung, R. T., Levi, A. F. J. (1988) ‘‘Coreless defects’’ and the continuity of epitaxial NiSi2/Si(100) thin films. Applied Physics Letters, 52 (10). 828-830 doi:10.1063/1.99297
Varhue, W. J., Rogers, J. L., Andry, P. S., Adams, E. (1996) Epitaxial film thickness in the low‐temperature growth of Si(100) by plasma enhanced chemical vapor deposition. Applied Physics Letters, 68 (3). 349-351 doi:10.1063/1.116712
Zhang, X. W., Wong, S. P., Cheung, W. Y., Zhang, F. (2002) Electrical transport properties of NiSi2 layers synthesized by metal vapor vacuum-arc ion implantation: Temperature dependence and two-band model. Applied Physics Letters, 80 (2). 249-251 doi:10.1063/1.1432762
Tung, R. T., Eaglesham, D. J., Schrey, F., Sullivan, J. P. (1993) Single‐crystal Si/NiSi2/Si(100) structures. Journal of Applied Physics, 73 (12). 8250-8257 doi:10.1063/1.353443
Sullivan, J. P., Tung, R. T., Schrey, F. (1992) Control of interfacial morphology: NiSi2/Si(100). Journal of Applied Physics, 72 (2). 478-489 doi:10.1063/1.351878
GĂĄmiz, F., RoldĂĄn, J. B., Godoy, A. (2002) Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility. Applied Physics Letters, 80 (22). 4160-4162 doi:10.1063/1.1483907
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 3, 2025 00:37:36
Go to top of page