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Chung, Deuk-Seok, Park, S. H., Lee, H. W., Choi, J. H., Cha, S. N., Kim, J. W., Jang, J. E., Min, K. W., Cho, S. H., Yoon, M. J., Lee, J. S., Lee, C. K., Yoo, J. H., Kim, Jong-Min, Jung, J. E., Jin, Y. W., Park, Y. J., You, J. B. (2002) Carbon nanotube electron emitters with a gated structure using backside exposure processes. Applied Physics Letters, 80 (21). 4045-4047 doi:10.1063/1.1480104

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Reference TypeJournal (article/letter/editorial)
TitleCarbon nanotube electron emitters with a gated structure using backside exposure processes
JournalApplied Physics Letters
AuthorsChung, Deuk-SeokAuthor
Park, S. H.Author
Lee, H. W.Author
Choi, J. H.Author
Cha, S. N.Author
Kim, J. W.Author
Jang, J. E.Author
Min, K. W.Author
Cho, S. H.Author
Yoon, M. J.Author
Lee, J. S.Author
Lee, C. K.Author
Yoo, J. H.Author
Kim, Jong-MinAuthor
Jung, J. E.Author
Jin, Y. W.Author
Park, Y. J.Author
You, J. B.Author
Year2002 (May 27)Volume80
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.1480104Search in ResearchGate
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Mindat Ref. ID8532096Long-form Identifiermindat:1:5:8532096:9
GUID0
Full ReferenceChung, Deuk-Seok, Park, S. H., Lee, H. W., Choi, J. H., Cha, S. N., Kim, J. W., Jang, J. E., Min, K. W., Cho, S. H., Yoon, M. J., Lee, J. S., Lee, C. K., Yoo, J. H., Kim, Jong-Min, Jung, J. E., Jin, Y. W., Park, Y. J., You, J. B. (2002) Carbon nanotube electron emitters with a gated structure using backside exposure processes. Applied Physics Letters, 80 (21). 4045-4047 doi:10.1063/1.1480104
Plain TextChung, Deuk-Seok, Park, S. H., Lee, H. W., Choi, J. H., Cha, S. N., Kim, J. W., Jang, J. E., Min, K. W., Cho, S. H., Yoon, M. J., Lee, J. S., Lee, C. K., Yoo, J. H., Kim, Jong-Min, Jung, J. E., Jin, Y. W., Park, Y. J., You, J. B. (2002) Carbon nanotube electron emitters with a gated structure using backside exposure processes. Applied Physics Letters, 80 (21). 4045-4047 doi:10.1063/1.1480104
In(2002, May) Applied Physics Letters Vol. 80 (21) AIP Publishing

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