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Tiwari, Ashutosh, Jin, C., Narayan, J. (2002) Strain-induced tuning of metal–insulator transition in NdNiO3. Applied Physics Letters, 80 (21). 4039-4041 doi:10.1063/1.1480475

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Reference TypeJournal (article/letter/editorial)
TitleStrain-induced tuning of metal–insulator transition in NdNiO3
JournalApplied Physics Letters
AuthorsTiwari, AshutoshAuthor
Jin, C.Author
Narayan, J.Author
Year2002 (May 27)Volume80
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.1480475Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8532098Long-form Identifiermindat:1:5:8532098:7
GUID0
Full ReferenceTiwari, Ashutosh, Jin, C., Narayan, J. (2002) Strain-induced tuning of metal–insulator transition in NdNiO3. Applied Physics Letters, 80 (21). 4039-4041 doi:10.1063/1.1480475
Plain TextTiwari, Ashutosh, Jin, C., Narayan, J. (2002) Strain-induced tuning of metal–insulator transition in NdNiO3. Applied Physics Letters, 80 (21). 4039-4041 doi:10.1063/1.1480475
In(2002, May) Applied Physics Letters Vol. 80 (21) AIP Publishing

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Tiwari, Ashutosh, Narayan, J., Jin, C., Kvit, A. (2002) Growth of epitaxial NdNiO3 and integration with Si(100). Applied Physics Letters, 80 (8). 1337-1339 doi:10.1063/1.1451984
Tiwari, Ashutosh, Jin, C., Narayan, J., Park, M. (2004) Electrical transport in ZnO1−δ films: Transition from band-gap insulator to Anderson localized insulator. Journal of Applied Physics, 96 (7). 3827-3830 doi:10.1063/1.1783591
Tiwari, Ashutosh, Jin, C., Narayan, J., Park, M. (2005) Publisher's Note: “Electrical transport in ZnO1−δfilms: Transition from band-gap insulator to Anderson localized insulator” [J. Appl. Phys. 96, 3827 (2004)]. Journal of Applied Physics, 97 (5). 59902pp. doi:10.1063/1.1861992
Tiwari, Ashutosh, Jin, C., Kumar, D., Narayan, J. (2003) Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure. Applied Physics Letters, 83 (9). 1773-1775 doi:10.1063/1.1605801
Tiwari, Ashutosh, Rajeev, K. P. (1999) Metal-insulator transition in La0.7Sr0.3Mn1−xFexO3. Journal of Applied Physics, 86 (9). 5175-5178 doi:10.1063/1.371496
Kumar, Yogesh, Choudhary, R. J., Kumar, Ravi (2012) Strain controlled systematic variation of metal-insulator transition in epitaxial NdNiO3 thin films. Journal of Applied Physics, 112 (7). 73718pp. doi:10.1063/1.4758306
Liu, Jian, Kareev, M., Gray, B., Kim, J. W., Ryan, P., Dabrowski, B., Freeland, J. W., Chakhalian, J. (2010) Strain-mediated metal-insulator transition in epitaxial ultrathin films of NdNiO3. Applied Physics Letters, 96 (23). 233110pp. doi:10.1063/1.3451462
Wang, H., Tiwari, Ashutosh, Zhang, X., Kvit, A., Narayan, J. (2002) Copper diffusion characteristics in single-crystal and polycrystalline TaN. Applied Physics Letters, 81 (8). 1453-1455 doi:10.1063/1.1502193
Saleem, M. S., Song, C., Peng, J. J., Cui, B., Li, F., Gu, Y. D., Pan, F. (2017) Metal-insulator-metal transition in NdNiO3 films capped by CoFe2O4. Applied Physics Letters, 110 (7). 72406pp. doi:10.1063/1.4976700
Wang, H., Tiwari, Ashutosh, Kvit, A., Zhang, X., Narayan, J. (2002) Epitaxial growth of TaN thin films on Si(100) and Si(111) using a TiN buffer layer. Applied Physics Letters, 80 (13). 2323-2325 doi:10.1063/1.1466522
Jin, Chunming, Tiwari, Ashutosh, Narayan, Roger J. (2005) Ultraviolet-illumination-enhanced photoluminescence effect in zinc oxide thin films. Journal of Applied Physics, 98 (8). 83707pp. doi:10.1063/1.2108156
 
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