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Cheng, I-Chun, Wagner, Sigurd (2002) Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C. Applied Physics Letters, 80 (3). 440-442 doi:10.1063/1.1435798

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Reference TypeJournal (article/letter/editorial)
TitleHole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C
JournalApplied Physics Letters
AuthorsCheng, I-ChunAuthor
Wagner, SigurdAuthor
Year2002 (January 21)Volume80
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.1435798Search in ResearchGate
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Mindat Ref. ID8532454Long-form Identifiermindat:1:5:8532454:9
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Full ReferenceCheng, I-Chun, Wagner, Sigurd (2002) Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C. Applied Physics Letters, 80 (3). 440-442 doi:10.1063/1.1435798
Plain TextCheng, I-Chun, Wagner, Sigurd (2002) Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C. Applied Physics Letters, 80 (3). 440-442 doi:10.1063/1.1435798
In(2002, January) Applied Physics Letters Vol. 80 (3) AIP Publishing

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Han, Lin, Mandlik, Prashant, Cherenack, Kunigunde H., Wagner, Sigurd (2009) Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm2/V s for electrons and 0.1 cm2/V s for holes. Applied Physics Letters, 94 (16). 162105pp. doi:10.1063/1.3119636
Gleskova, Helena, Cheng, I-Chun, Wagner, Sigurd, Suo, Zhigang (2006) Thermomechanical criteria for overlay alignment in flexible thin-film electronic circuits. Applied Physics Letters, 88 (1). 11905pp. doi:10.1063/1.2161391
Misiakos, Konstantinos, Tsamakis, Dimitris (1994) Electron and hole mobilities in lightly doped silicon. Applied Physics Letters, 64 (15). 2007-2009 doi:10.1063/1.111721
Cheng, I-Chun, Allen, Steven, Wagner, Sigurd (2004) Evolution of nanocrystalline silicon thin film transistor channel layers. Journal of Non-Crystalline Solids, 338. 720-724 doi:10.1016/j.jnoncrysol.2004.03.076
Yan, Hu, Kagata, Tsubasa, Okuzaki, Hidenori (2009) Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere. Applied Physics Letters, 94 (2). 23305pp. doi:10.1063/1.3072608
Payne, Adam M., Wagner, Sigurd (2000) The effect of chlorine on dopant activation in hydrogenated amorphous silicon. Applied Physics Letters, 76 (20). 2949-2951 doi:10.1063/1.126526
Lee, Czang-Ho, Sazonov, Andrei, Nathan, Arokia, Robertson, John (2006) Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities. Applied Physics Letters, 89 (25). 252101pp. doi:10.1063/1.2408630
Chen, Yu, Wagner, Sigurd (1999) Inverter made of complementary p and n channel transistors using a single directly deposited microcrystalline silicon film. Applied Physics Letters, 75 (8). 1125-1127 doi:10.1063/1.124617
Misiakos, Konstantinos, Tsamakis, Dimitris (1994) Erratum: ‘‘Electron and hole mobilities in lightly doped silicon’’ [Appl. Phys. Lett. 64, 2007 (1994)]. Applied Physics Letters, 65 (26). 3416 doi:10.1063/1.113095
Wu, Ming, Pangal, Kiran, Sturm, J. C., Wagner, Sigurd (1999) High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates. Applied Physics Letters, 75 (15). 2244-2246 doi:10.1063/1.124978
Wagner, A. (1982) The hydrodynamics of liquid metal ion sources. Applied Physics Letters, 40 (5). 440-442 doi:10.1063/1.93100
 
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