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Vurgaftman, I., Meyer, J. R., Tansu, N., Mawst, L. J. (2003) (In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm. Applied Physics Letters, 83 (14). 2742-2744 doi:10.1063/1.1616193

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Reference TypeJournal (article/letter/editorial)
Title(In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm
JournalApplied Physics Letters
AuthorsVurgaftman, I.Author
Meyer, J. R.Author
Tansu, N.Author
Mawst, L. J.Author
Year2003 (October 6)Volume83
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1616193Search in ResearchGate
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Mindat Ref. ID8536490Long-form Identifiermindat:1:5:8536490:9
GUID0
Full ReferenceVurgaftman, I., Meyer, J. R., Tansu, N., Mawst, L. J. (2003) (In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm. Applied Physics Letters, 83 (14). 2742-2744 doi:10.1063/1.1616193
Plain TextVurgaftman, I., Meyer, J. R., Tansu, N., Mawst, L. J. (2003) (In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm. Applied Physics Letters, 83 (14). 2742-2744 doi:10.1063/1.1616193
In(2003, October) Applied Physics Letters Vol. 83 (14) AIP Publishing

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Vurgaftman, I., Meyer, J. R., Tansu, N., Mawst, L. J. (2004) InP-based dilute-nitride mid-infrared type-II “W” quantum-well lasers. Journal of Applied Physics, 96 (8). 4653-4655 doi:10.1063/1.1794898
Yeh, J.-Y., Mawst, L. J., Khandekar, A. A., Kuech, T. F., Vurgaftman, I., Meyer, J. R., Tansu, N. (2006) Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells. Applied Physics Letters, 88 (5). 51115pp. doi:10.1063/1.2171486
Stokes, D. W., Olafsen, L. J., Bewley, W. W., Vurgaftman, I., Felix, C. L., Aifer, E. H., Meyer, J. R., Yang, M. J. (1999) Type-II quantum-well “W” lasers emitting at λ=5.4–7.3 μm. Journal of Applied Physics, 86 (9). 4729-4733 doi:10.1063/1.371436
Tansu, Nelson, Yeh, Jeng-Ya, Mawst, Luke J. (2003) Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers. Applied Physics Letters, 83 (13). 2512-2514 doi:10.1063/1.1613998
Shin, J. C., D’Souza, M., Liu, Z., Kirch, J., Mawst, L. J., Botez, D., Vurgaftman, I., Meyer, J. R. (2009) Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers. Applied Physics Letters, 94 (20). 201103pp. doi:10.1063/1.3139069
Khandekar, A. A., Hawkins, B. E., Kuech, T. F., Yeh, J. Y., Mawst, L. J., Meyer, J. R., Vurgaftman, I., Tansu, N. (2005) Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates. Journal of Applied Physics, 98 (12). 123525pp. doi:10.1063/1.2148620
Tansu, Nelson, Yeh, Jeng-Ya, Mawst, Luke J. (2003) Experimental evidence of carrier leakage in InGaAsN quantum-well lasers. Applied Physics Letters, 83 (11). 2112-2114 doi:10.1063/1.1611279
Tansu, Nelson, Mawst, Luke J. (2003) The role of hole leakage in 1300-nm InGaAsN quantum-well lasers. Applied Physics Letters, 82 (10). 1500-1502 doi:10.1063/1.1558218
Bewley, W. W., Aifer, E. H., Felix, C. L., Vurgaftman, I., Meyer, J. R., Lin, C.-H., Murry, S. J., Zhang, D., Pei, S. S. (1997) High-temperature type-II superlattice diode laser at λ=2.9 μm. Applied Physics Letters, 71 (25). 3607-3609 doi:10.1063/1.120455
Botez, D., Kumar, S., Shin, J. C., Mawst, L. J., Vurgaftman, I., Meyer, J. R. (2010) Temperature dependence of the key electro-optical characteristics for midinfrared emitting quantum cascade lasers. Applied Physics Letters, 97 (7). 71101pp. doi:10.1063/1.3478836
Tansu, Nelson, Yeh, Jeng-Ya, Mawst, Luke J. (2003) Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm. Applied Physics Letters, 82 (23). 4038-4040 doi:10.1063/1.1581978
 
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