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Yeh, J.-Y., Mawst, L. J., Khandekar, A. A., Kuech, T. F., Vurgaftman, I., Meyer, J. R., Tansu, N. (2006) Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells. Applied Physics Letters, 88 (5). 51115pp. doi:10.1063/1.2171486

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Reference TypeJournal (article/letter/editorial)
TitleLong wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells
JournalApplied Physics Letters
AuthorsYeh, J.-Y.Author
Mawst, L. J.Author
Khandekar, A. A.Author
Kuech, T. F.Author
Vurgaftman, I.Author
Meyer, J. R.Author
Tansu, N.Author
Year2006 (January 30)Volume88
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.2171486Search in ResearchGate
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Mindat Ref. ID8548650Long-form Identifiermindat:1:5:8548650:2
GUID0
Full ReferenceYeh, J.-Y., Mawst, L. J., Khandekar, A. A., Kuech, T. F., Vurgaftman, I., Meyer, J. R., Tansu, N. (2006) Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells. Applied Physics Letters, 88 (5). 51115pp. doi:10.1063/1.2171486
Plain TextYeh, J.-Y., Mawst, L. J., Khandekar, A. A., Kuech, T. F., Vurgaftman, I., Meyer, J. R., Tansu, N. (2006) Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells. Applied Physics Letters, 88 (5). 51115pp. doi:10.1063/1.2171486
In(2006, January) Applied Physics Letters Vol. 88 (5) AIP Publishing

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Yeh, J.-Y., Mawst, L.J., Khandekar, A.A., Kuech, T.F., Vurgaftman, I., Meyer, J.R., Tansu, N. (2006) Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells. Journal of Crystal Growth, 287 (2). 615-619 doi:10.1016/j.jcrysgro.2005.10.087
Khandekar, A. A., Hawkins, B. E., Kuech, T. F., Yeh, J. Y., Mawst, L. J., Meyer, J. R., Vurgaftman, I., Tansu, N. (2005) Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates. Journal of Applied Physics, 98 (12). 123525pp. doi:10.1063/1.2148620
Vurgaftman, I., Meyer, J. R., Tansu, N., Mawst, L. J. (2003) (In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm. Applied Physics Letters, 83 (14). 2742-2744 doi:10.1063/1.1616193
Huang, J Y T, Mawst, L J, Kuech, T F, Song, X, Babcock, S E, Kim, C S, Vurgaftman, I, Meyer, J R, Holmes, A L (2009) Design and characterization of strained InGaAs/GaAsSb type-II ‘W’ quantum wells on InP substrates for mid-IR emission. Journal of Physics D: Applied Physics, 42. 25108pp. doi:10.1088/0022-3727/42/2/025108
Xu, D. P., Huang, J. Y. T., Park, J. H., Mawst, L. J., Kuech, T. F., Vurgaftman, I., Meyer, J. R. (2007) Characteristics of dilute-nitride GaAsSbN∕InP strained multiple quantum wells. Applied Physics Letters, 90 (17). 171913pp. doi:10.1063/1.2731730
Vurgaftman, I., Meyer, J. R., Tansu, N., Mawst, L. J. (2004) InP-based dilute-nitride mid-infrared type-II “W” quantum-well lasers. Journal of Applied Physics, 96 (8). 4653-4655 doi:10.1063/1.1794898
Rathi, M. K., Khandekar, A. A., Song, Xueyan, Babcock, S. E., Mawst, L. J., Kuech, T. F. (2009) High antimony content GaAs1−zNz–GaAs1−ySby type-II “W” structure for long wavelength emission. Journal of Applied Physics, 106 (6). 63713pp. doi:10.1063/1.3226000
Wheatley, R., Kesaria, M., Mawst, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. D., Krier, A. (2015) Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters, 106 (23). 232105pp. doi:10.1063/1.4922590
Huang, J Y T, Xu, D P, Park, J H, Mawst, L J, Kuech, T F, Song, X, Babcock, S E, Vurgaftman, I, Meyer, J R (2007) Characteristics of strained GaAs1−ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates. Journal of Physics D: Applied Physics, 40. 7656-7661 doi:10.1088/0022-3727/40/24/010
Tansu, Nelson, Yeh, Jeng-Ya, Mawst, Luke J. (2003) Experimental evidence of carrier leakage in InGaAsN quantum-well lasers. Applied Physics Letters, 83 (11). 2112-2114 doi:10.1063/1.1611279
Tansu, Nelson, Yeh, Jeng-Ya, Mawst, Luke J. (2003) Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers. Applied Physics Letters, 83 (13). 2512-2514 doi:10.1063/1.1613998
 
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