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Xu, D. P., Huang, J. Y. T., Park, J. H., Mawst, L. J., Kuech, T. F., Vurgaftman, I., Meyer, J. R. (2007) Characteristics of dilute-nitride GaAsSbN∕InP strained multiple quantum wells. Applied Physics Letters, 90 (17). 171913pp. doi:10.1063/1.2731730

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Reference TypeJournal (article/letter/editorial)
TitleCharacteristics of dilute-nitride GaAsSbN∕InP strained multiple quantum wells
JournalApplied Physics Letters
AuthorsXu, D. P.Author
Huang, J. Y. T.Author
Park, J. H.Author
Mawst, L. J.Author
Kuech, T. F.Author
Vurgaftman, I.Author
Meyer, J. R.Author
Year2007 (April 23)Volume90
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.2731730Search in ResearchGate
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Mindat Ref. ID8553669Long-form Identifiermindat:1:5:8553669:4
GUID0
Full ReferenceXu, D. P., Huang, J. Y. T., Park, J. H., Mawst, L. J., Kuech, T. F., Vurgaftman, I., Meyer, J. R. (2007) Characteristics of dilute-nitride GaAsSbN∕InP strained multiple quantum wells. Applied Physics Letters, 90 (17). 171913pp. doi:10.1063/1.2731730
Plain TextXu, D. P., Huang, J. Y. T., Park, J. H., Mawst, L. J., Kuech, T. F., Vurgaftman, I., Meyer, J. R. (2007) Characteristics of dilute-nitride GaAsSbN∕InP strained multiple quantum wells. Applied Physics Letters, 90 (17). 171913pp. doi:10.1063/1.2731730
In(2007, April) Applied Physics Letters Vol. 90 (17) AIP Publishing

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Xu, D. P., Huang, J. Y. T., Park, J., Mawst, L. J., Kuech, T. F., Song, X., Babcock, S. E. (2007) Annealing of dilute-nitride GaAsSbN∕InP strained multiple quantum wells. Applied Physics Letters, 91 (19). 191909pp. doi:10.1063/1.2805637
Huang, J Y T, Xu, D P, Park, J H, Mawst, L J, Kuech, T F, Song, X, Babcock, S E, Vurgaftman, I, Meyer, J R (2007) Characteristics of strained GaAs1−ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates. Journal of Physics D: Applied Physics, 40. 7656-7661 doi:10.1088/0022-3727/40/24/010
Yeh, J.-Y., Mawst, L. J., Khandekar, A. A., Kuech, T. F., Vurgaftman, I., Meyer, J. R., Tansu, N. (2006) Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells. Applied Physics Letters, 88 (5). 51115pp. doi:10.1063/1.2171486
Huang, J Y T, Mawst, L J, Kuech, T F, Song, X, Babcock, S E, Kim, C S, Vurgaftman, I, Meyer, J R, Holmes, A L (2009) Design and characterization of strained InGaAs/GaAsSb type-II ‘W’ quantum wells on InP substrates for mid-IR emission. Journal of Physics D: Applied Physics, 42. 25108pp. doi:10.1088/0022-3727/42/2/025108
Wheatley, R., Kesaria, M., Mawst, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. D., Krier, A. (2015) Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters, 106 (23). 232105pp. doi:10.1063/1.4922590
Vurgaftman, I., Meyer, J. R., Tansu, N., Mawst, L. J. (2004) InP-based dilute-nitride mid-infrared type-II “W” quantum-well lasers. Journal of Applied Physics, 96 (8). 4653-4655 doi:10.1063/1.1794898
Khandekar, A. A., Hawkins, B. E., Kuech, T. F., Yeh, J. Y., Mawst, L. J., Meyer, J. R., Vurgaftman, I., Tansu, N. (2005) Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates. Journal of Applied Physics, 98 (12). 123525pp. doi:10.1063/1.2148620
Park, J. H., Kirch, J., Mawst, L. J., Liu, C.-C., Nealey, P. F., Kuech, T. F. (2009) Controlled growth of InGaAs/InGaAsP quantum dots on InP substrates employing diblock copolymer lithography. Applied Physics Letters, 95 (11). 113111pp. doi:10.1063/1.3224916
Kim, N. H., Ramamurthy, P., Mawst, L. J., Kuech, T. F., Modak, P., Goodnough, T. J., Forbes, D. V., Kanskar, M. (2005) Characteristics of InGaAs quantum dots grown on tensile-strained GaAs1−xPx. Journal of Applied Physics, 97 (9). 93518pp. doi:10.1063/1.1884249
Botez, D., Kumar, S., Shin, J. C., Mawst, L. J., Vurgaftman, I., Meyer, J. R. (2010) Temperature dependence of the key electro-optical characteristics for midinfrared emitting quantum cascade lasers. Applied Physics Letters, 97 (7). 71101pp. doi:10.1063/1.3478836
Yeh, J.-Y., Mawst, L.J., Khandekar, A.A., Kuech, T.F., Vurgaftman, I., Meyer, J.R., Tansu, N. (2006) Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells. Journal of Crystal Growth, 287 (2). 615-619 doi:10.1016/j.jcrysgro.2005.10.087
 
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