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Hearne, S. M., Jamieson, D. N., Trajkov, E., Prawer, S., Butler, J. E. (2004) Temperature-dependent emptying of grain-boundary charge traps in chemical vapor deposited diamond. Applied Physics Letters, 84 (22). 4493-4495 doi:10.1063/1.1756201

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Reference TypeJournal (article/letter/editorial)
TitleTemperature-dependent emptying of grain-boundary charge traps in chemical vapor deposited diamond
JournalApplied Physics Letters
AuthorsHearne, S. M.Author
Jamieson, D. N.Author
Trajkov, E.Author
Prawer, S.Author
Butler, J. E.Author
Year2004 (May 31)Volume84
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.1756201Search in ResearchGate
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Mindat Ref. ID8538897Long-form Identifiermindat:1:5:8538897:2
GUID0
Full ReferenceHearne, S. M., Jamieson, D. N., Trajkov, E., Prawer, S., Butler, J. E. (2004) Temperature-dependent emptying of grain-boundary charge traps in chemical vapor deposited diamond. Applied Physics Letters, 84 (22). 4493-4495 doi:10.1063/1.1756201
Plain TextHearne, S. M., Jamieson, D. N., Trajkov, E., Prawer, S., Butler, J. E. (2004) Temperature-dependent emptying of grain-boundary charge traps in chemical vapor deposited diamond. Applied Physics Letters, 84 (22). 4493-4495 doi:10.1063/1.1756201
In(2004, May) Applied Physics Letters Vol. 84 (22) AIP Publishing

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Hearne, S. M., Trajkov, E., Jamieson, D. N., Butler, J. E., Prawer, S. (2006) The role of charge trapping at grain boundaries on charge transport in polycrystalline chemical vapor deposited diamond based detectors. Journal of Applied Physics, 99 (11). 113703pp. doi:10.1063/1.2194116
Trajkov, E., Prawer, S., Butler, J. E., Hearne, S. M. (2005) Charge trap levels in sulfur-doped chemical-vapor-deposited diamond with applications to ultraviolet dosimetry. Journal of Applied Physics, 98 (2). 23704pp. doi:10.1063/1.1984079
Pakes, C. I., Ramelow, S., Prawer, S., Jamieson, D. N. (2004) Nanoscale electrical characterization of trap-assisted quasibreakdown fluctuations in SiO2. Applied Physics Letters, 84 (16). 3142-3144 doi:10.1063/1.1712033
Han, S., Wagner, R. S. (1996) Grain boundary effects on carrier transport in undoped polycrystalline chemicalā€vaporā€deposited diamond. Applied Physics Letters, 68 (21). 3016-3018 doi:10.1063/1.116682
Jamieson, D. N., Yang, C., Hopf, T., Hearne, S. M., Pakes, C. I., Prawer, S., Mitic, M., Gauja, E., Andresen, S. E., Hudson, F. E., Dzurak, A. S., Clark, R. G. (2005) Controlled shallow single-ion implantation in silicon using an active substrate for sub-20ā€keV ions. Applied Physics Letters, 86 (20). 202101pp. doi:10.1063/1.1925320
Allen, M. G., Prawer, S., Jamieson, D. N., Kalish, R. (1993) Pulsed laser annealing of Pā€implanted diamond. Applied Physics Letters, 63 (15). 2062-2064 doi:10.1063/1.110592
Gonon, P., Prawer, S., Jamieson, D. (1997) Thermally stimulated currents in polycrystalline diamond films: Application to radiation dosimetry. Applied Physics Letters, 70 (22). 2996-2998 doi:10.1063/1.118768
Koenigsfeld, N., Kalish, R., Cimmino, A., Hoxley, D., Prawer, S., Yamada, I. (2001) Effect of surface roughness on field emission from chemical vapor deposited polycrystalline diamond. Applied Physics Letters, 79 (9). 1288-1290 doi:10.1063/1.1383803
Gonon, P., Prawer, S., Jamieson, D. (1996) Photoinduced conductivity changes in polycrystalline diamond films. Applied Physics Letters, 68 (9). 1238-1240 doi:10.1063/1.115938
Hoffman, A., Andrienko, I., Jamieson, D. N., Prawer, S. (2005) Electron trapping and detrapping in ion-beam-damaged diamond surfaces. Applied Physics Letters, 86 (4). 44103pp. doi:10.1063/1.1852083
Prawer, S., Nugent, K. W., Weiser, P. S. (1994) Polarized Raman spectroscopy of chemically vapor deposited diamond films. Applied Physics Letters, 65 (18). 2248-2250 doi:10.1063/1.112778
 
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