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Jamieson, D. N., Yang, C., Hopf, T., Hearne, S. M., Pakes, C. I., Prawer, S., Mitic, M., Gauja, E., Andresen, S. E., Hudson, F. E., Dzurak, A. S., Clark, R. G. (2005) Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions. Applied Physics Letters, 86 (20). 202101pp. doi:10.1063/1.1925320

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Reference TypeJournal (article/letter/editorial)
TitleControlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions
JournalApplied Physics Letters
AuthorsJamieson, D. N.Author
Yang, C.Author
Hopf, T.Author
Hearne, S. M.Author
Pakes, C. I.Author
Prawer, S.Author
Mitic, M.Author
Gauja, E.Author
Andresen, S. E.Author
Hudson, F. E.Author
Dzurak, A. S.Author
Clark, R. G.Author
Year2005 (May 16)Volume86
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1925320Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8542895Long-form Identifiermindat:1:5:8542895:1
GUID0
Full ReferenceJamieson, D. N., Yang, C., Hopf, T., Hearne, S. M., Pakes, C. I., Prawer, S., Mitic, M., Gauja, E., Andresen, S. E., Hudson, F. E., Dzurak, A. S., Clark, R. G. (2005) Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions. Applied Physics Letters, 86 (20). 202101pp. doi:10.1063/1.1925320
Plain TextJamieson, D. N., Yang, C., Hopf, T., Hearne, S. M., Pakes, C. I., Prawer, S., Mitic, M., Gauja, E., Andresen, S. E., Hudson, F. E., Dzurak, A. S., Clark, R. G. (2005) Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions. Applied Physics Letters, 86 (20). 202101pp. doi:10.1063/1.1925320
In(2005, May) Applied Physics Letters Vol. 86 (20) AIP Publishing

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Hopf, T., Jamieson, D.N., Hearne, S.M., Yang, C., Pakes, C.I., Dzurak, A.S., Gauja, E., Clark, R.G. (2005) Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 231 (1). 463-466 doi:10.1016/j.nimb.2005.01.101
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