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Lichtenberger, H., Mühlberger, M., Schäffler, F. (2005) Ordering of Si0.55Ge0.45 islands on vicinal Si(001) substrates: Interplay between kinetic step bunching and strain-driven island growth. Applied Physics Letters, 86 (13). 131919pp. doi:10.1063/1.1896425

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Reference TypeJournal (article/letter/editorial)
TitleOrdering of Si0.55Ge0.45 islands on vicinal Si(001) substrates: Interplay between kinetic step bunching and strain-driven island growth
JournalApplied Physics Letters
AuthorsLichtenberger, H.Author
Mühlberger, M.Author
Schäffler, F.Author
Year2005 (March 28)Volume86
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.1896425Search in ResearchGate
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Mindat Ref. ID8542232Long-form Identifiermindat:1:5:8542232:8
GUID0
Full ReferenceLichtenberger, H., Mühlberger, M., Schäffler, F. (2005) Ordering of Si0.55Ge0.45 islands on vicinal Si(001) substrates: Interplay between kinetic step bunching and strain-driven island growth. Applied Physics Letters, 86 (13). 131919pp. doi:10.1063/1.1896425
Plain TextLichtenberger, H., Mühlberger, M., Schäffler, F. (2005) Ordering of Si0.55Ge0.45 islands on vicinal Si(001) substrates: Interplay between kinetic step bunching and strain-driven island growth. Applied Physics Letters, 86 (13). 131919pp. doi:10.1063/1.1896425
In(2005, March) Applied Physics Letters Vol. 86 (13) AIP Publishing

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Lichtenberger, H., Mühlberger, M., Schelling, C., Schäffler, F. (2005) Ordering of self-assembled islands on vicinal Si(001) substrates. Journal of Crystal Growth, 278 (1). 78-82 doi:10.1016/j.jcrysgro.2004.12.066
Lichtenberger, H., Mühlberger, M., Schäffler, F. (2003) Transient-enhanced Si diffusion on native-oxide-covered Si(001) nanostructures during vacuum annealing. Applied Physics Letters, 82 (21). 3650-3652 doi:10.1063/1.1577391
Schelling, C., Mühlberger, M., Springholz, G., Schäffler, F. (2001) Si1−xGexgrowth instabilities on vicinal Si(001) substrates: Kinetic vs. strain-induced effects. Physical Review B, 64 (4) doi:10.1103/physrevb.64.041301
Zhong, Zhenyang, Halilovic, A., Mühlberger, M., Schäffler, F., Bauer, G. (2003) Ge island formation on stripe-patterned Si(001) substrates. Applied Physics Letters, 82 (3). 445-447 doi:10.1063/1.1536265
Pachinger, D., Groiss, H., Lichtenberger, H., Stangl, J., Hesser, G., Schäffler, F. (2007) Stranski-Krastanow growth of tensile strained Si islands on Ge (001). Applied Physics Letters, 91 (23). 233106pp. doi:10.1063/1.2820605
Chen, Gang, Vastola, G., Lichtenberger, H., Pachinger, D., Bauer, G., Jantsch, W., Schäffler, F., Miglio, Leo (2008) Ordering of Ge islands on hill-patterned Si (001) templates. Applied Physics Letters, 92 (11). 113106pp. doi:10.1063/1.2898522
Zhong, Zhenyang, Halilovic, A., Mühlberger, M., Schäffler, F., Bauer, G. (2003) Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates. Journal of Applied Physics, 93 (10). 6258-6264 doi:10.1063/1.1566455
Berer, T., Pachinger, D., Pillwein, G., Mühlberger, M., Lichtenberger, H., Brunthaler, G., Schäffler, F. (2006) Lateral quantum dots in Si∕SiGe realized by a Schottky split-gate technique. Applied Physics Letters, 88 (16). 162112pp. doi:10.1063/1.2197320
Mühlberger, M., Schelling, C., Springholz, G., Schäffler, F. (2003) Step-bunching in SiGe layers and superlattices on Si. Surface Science, 532. 721-726 doi:10.1016/s0039-6028(03)00232-2
Lausecker, E., Brehm, M., Grydlik, M., Hackl, F., Bergmair, I., Mühlberger, M., Fromherz, T., Schäffler, F., Bauer, G. (2011) UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays. Applied Physics Letters, 98 (14). 143101pp. doi:10.1063/1.3575554
Schelling, C., Springholz, G., Schäffler, F. (1999) Kinetic Growth Instabilities on Vicinal Si(001) Surfaces. Physical Review Letters, 83 (5). 995-998 doi:10.1103/physrevlett.83.995
 
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