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Pachinger, D., Groiss, H., Lichtenberger, H., Stangl, J., Hesser, G., Schäffler, F. (2007) Stranski-Krastanow growth of tensile strained Si islands on Ge (001). Applied Physics Letters, 91 (23). 233106pp. doi:10.1063/1.2820605

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Reference TypeJournal (article/letter/editorial)
TitleStranski-Krastanow growth of tensile strained Si islands on Ge (001)
JournalApplied Physics Letters
AuthorsPachinger, D.Author
Groiss, H.Author
Lichtenberger, H.Author
Stangl, J.Author
Hesser, G.Author
Schäffler, F.Author
Year2007 (December 3)Volume91
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.2820605Search in ResearchGate
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Mindat Ref. ID8558237Long-form Identifiermindat:1:5:8558237:4
GUID0
Full ReferencePachinger, D., Groiss, H., Lichtenberger, H., Stangl, J., Hesser, G., Schäffler, F. (2007) Stranski-Krastanow growth of tensile strained Si islands on Ge (001). Applied Physics Letters, 91 (23). 233106pp. doi:10.1063/1.2820605
Plain TextPachinger, D., Groiss, H., Lichtenberger, H., Stangl, J., Hesser, G., Schäffler, F. (2007) Stranski-Krastanow growth of tensile strained Si islands on Ge (001). Applied Physics Letters, 91 (23). 233106pp. doi:10.1063/1.2820605
In(2007, December) Applied Physics Letters Vol. 91 (23) AIP Publishing

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Pachinger, D., Groiss, H., Teuchtmann, M., Hesser, G., Schäffler, F. (2011) Surfactant-mediated Si quantum dot formation on Ge(001). Applied Physics Letters, 98 (22). 223104pp. doi:10.1063/1.3595486
Chen, Gang, Vastola, G., Lichtenberger, H., Pachinger, D., Bauer, G., Jantsch, W., Schäffler, F., Miglio, Leo (2008) Ordering of Ge islands on hill-patterned Si (001) templates. Applied Physics Letters, 92 (11). 113106pp. doi:10.1063/1.2898522
Zhang, J. J., Hrauda, N., Groiss, H., Rastelli, A., Stangl, J., Schäffler, F., Schmidt, O. G., Bauer, G. (2010) Strain engineering in Si via closely stacked, site-controlled SiGe islands. Applied Physics Letters, 96 (19). 193101pp. doi:10.1063/1.3425776
Chen, G., Wintersberger, E., Vastola, G., Groiss, H., Stangl, J., Jantsch, W., Schäffler, F. (2010) Self-assembled Si0.80Ge0.20 nanoripples on Si(1 1 10) substrates. Applied Physics Letters, 96 (10). 103107pp. doi:10.1063/1.3358132
Lichtenberger, H., Mühlberger, M., Schäffler, F. (2005) Ordering of Si0.55Ge0.45 islands on vicinal Si(001) substrates: Interplay between kinetic step bunching and strain-driven island growth. Applied Physics Letters, 86 (13). 131919pp. doi:10.1063/1.1896425
Zhang, J. J., Montalenti, F., Rastelli, A., Hrauda, N., Scopece, D., Groiss, H., Stangl, J., Pezzoli, F., Schäffler, F., Schmidt, O. G., Miglio, L., Bauer, G. (2010) Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing. Physical Review Letters, 105 (16). doi:10.1103/physrevlett.105.166102
Berer, T., Pachinger, D., Pillwein, G., Mühlberger, M., Lichtenberger, H., Brunthaler, G., Schäffler, F. (2006) Lateral quantum dots in Si∕SiGe realized by a Schottky split-gate technique. Applied Physics Letters, 88 (16). 162112pp. doi:10.1063/1.2197320
Zhang, J. J., Rastelli, A., Groiss, H., Tersoff, J., Schäffler, F., Schmidt, O. G., Bauer, G. (2009) Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing. Applied Physics Letters, 95 (18). 183102pp. doi:10.1063/1.3258648
Brehm, M., Grydlik, M., Lichtenberger, H., Fromherz, T., Hrauda, N., Jantsch, W., Schäffler, F., Bauer, G. (2008) Quantitative determination of Ge profiles across SiGe wetting layers on Si (001). Applied Physics Letters, 93 (12). 121901pp. doi:10.1063/1.2988261
Norris, D. J., Qiu, Y., Dobbie, A., Myronov, M., Walther, T. (2014) Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001). Journal of Applied Physics, 115 (1). 12003pp. doi:10.1063/1.4837975
Lichtenberger, H., Mühlberger, M., Schäffler, F. (2003) Transient-enhanced Si diffusion on native-oxide-covered Si(001) nanostructures during vacuum annealing. Applied Physics Letters, 82 (21). 3650-3652 doi:10.1063/1.1577391
 
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