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Zhang, J. J., Rastelli, A., Groiss, H., Tersoff, J., Schäffler, F., Schmidt, O. G., Bauer, G. (2009) Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing. Applied Physics Letters, 95 (18). 183102pp. doi:10.1063/1.3258648

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Reference TypeJournal (article/letter/editorial)
TitleShaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing
JournalApplied Physics Letters
AuthorsZhang, J. J.Author
Rastelli, A.Author
Groiss, H.Author
Tersoff, J.Author
Schäffler, F.Author
Schmidt, O. G.Author
Bauer, G.Author
Year2009 (November 2)Volume95
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.3258648Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8578723Long-form Identifiermindat:1:5:8578723:4
GUID0
Full ReferenceZhang, J. J., Rastelli, A., Groiss, H., Tersoff, J., Schäffler, F., Schmidt, O. G., Bauer, G. (2009) Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing. Applied Physics Letters, 95 (18). 183102pp. doi:10.1063/1.3258648
Plain TextZhang, J. J., Rastelli, A., Groiss, H., Tersoff, J., Schäffler, F., Schmidt, O. G., Bauer, G. (2009) Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing. Applied Physics Letters, 95 (18). 183102pp. doi:10.1063/1.3258648
In(2009, November) Applied Physics Letters Vol. 95 (18) AIP Publishing

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Zhang, J. J., Hrauda, N., Groiss, H., Rastelli, A., Stangl, J., Schäffler, F., Schmidt, O. G., Bauer, G. (2010) Strain engineering in Si via closely stacked, site-controlled SiGe islands. Applied Physics Letters, 96 (19). 193101pp. doi:10.1063/1.3425776
Zhang, J. J., Montalenti, F., Rastelli, A., Hrauda, N., Scopece, D., Groiss, H., Stangl, J., Pezzoli, F., Schäffler, F., Schmidt, O. G., Miglio, L., Bauer, G. (2010) Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing. Physical Review Letters, 105 (16). doi:10.1103/physrevlett.105.166102
Katsaros, G., Stoffel, M., Rastelli, A., Schmidt, O. G., Kern, K., Tersoff, J. (2007) Three-dimensional isocompositional profiles of buried SiGe∕Si(001) islands. Applied Physics Letters, 91 (1). 13112pp. doi:10.1063/1.2752730
Zhang, Jianjun, Rastelli, Armando, Schmidt, Oliver G., Bauer, Günther (2010) Compositional evolution of SiGe islands on patterned Si (001) substrates. Applied Physics Letters, 97 (20). 203103pp. doi:10.1063/1.3514239
Pachinger, D., Groiss, H., Lichtenberger, H., Stangl, J., Hesser, G., Schäffler, F. (2007) Stranski-Krastanow growth of tensile strained Si islands on Ge (001). Applied Physics Letters, 91 (23). 233106pp. doi:10.1063/1.2820605
Zhang, J. J., Stoffel, M., Rastelli, A., Schmidt, O. G., Jovanović, V., Nanver, L. K., Bauer, G. (2007) SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening. Applied Physics Letters, 91 (17). 173115pp. doi:10.1063/1.2802555
Zhang, Jianjun, Rastelli, Armando, Schmidt, Oliver G., Bauer, Günther (2012) Site-controlled SiGe islands on patterned Si(001): Morphology, composition profiles, and devices. physica status solidi (b), 249 (4). 752-763 doi:10.1002/pssb.201100771
Brehm, M., Grydlik, M., Groiss, H., Hackl, F., Schäffler, F., Fromherz, T., Bauer, G. (2011) The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer. Journal of Applied Physics, 109 (12). 123505pp. doi:10.1063/1.3594693
Tersoff, J., Spencer, B. J., Rastelli, A., von Känel, H. (2002) Barrierless Formation and Faceting of SiGe Islands on Si(001). Physical Review Letters, 89 (19). doi:10.1103/physrevlett.89.196104
Zhang, J. J., Rastelli, A., Schmidt, O. G., Scopece, D., Miglio, L., Montalenti, F. (2013) Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing. Applied Physics Letters, 103 (8). 83109pp. doi:10.1063/1.4818717
Stangl, J., Roch, T., Bauer, G., Kegel, I., Metzger, T. H., Schmidt, O. G., Eberl, K., Kienzle, O., Ernst, F. (2000) Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy. Applied Physics Letters, 77 (24). 3953-3955 doi:10.1063/1.1333683
 
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