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Zhang, J. J., Hrauda, N., Groiss, H., Rastelli, A., Stangl, J., Schäffler, F., Schmidt, O. G., Bauer, G. (2010) Strain engineering in Si via closely stacked, site-controlled SiGe islands. Applied Physics Letters, 96 (19). 193101pp. doi:10.1063/1.3425776

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Reference TypeJournal (article/letter/editorial)
TitleStrain engineering in Si via closely stacked, site-controlled SiGe islands
JournalApplied Physics Letters
AuthorsZhang, J. J.Author
Hrauda, N.Author
Groiss, H.Author
Rastelli, A.Author
Stangl, J.Author
Schäffler, F.Author
Schmidt, O. G.Author
Bauer, G.Author
Year2010 (May 10)Volume96
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.3425776Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8583312Long-form Identifiermindat:1:5:8583312:6
GUID0
Full ReferenceZhang, J. J., Hrauda, N., Groiss, H., Rastelli, A., Stangl, J., Schäffler, F., Schmidt, O. G., Bauer, G. (2010) Strain engineering in Si via closely stacked, site-controlled SiGe islands. Applied Physics Letters, 96 (19). 193101pp. doi:10.1063/1.3425776
Plain TextZhang, J. J., Hrauda, N., Groiss, H., Rastelli, A., Stangl, J., Schäffler, F., Schmidt, O. G., Bauer, G. (2010) Strain engineering in Si via closely stacked, site-controlled SiGe islands. Applied Physics Letters, 96 (19). 193101pp. doi:10.1063/1.3425776
In(2010, May) Applied Physics Letters Vol. 96 (19) AIP Publishing

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Zhang, J. J., Rastelli, A., Groiss, H., Tersoff, J., Schäffler, F., Schmidt, O. G., Bauer, G. (2009) Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing. Applied Physics Letters, 95 (18). 183102pp. doi:10.1063/1.3258648
Zhang, J. J., Montalenti, F., Rastelli, A., Hrauda, N., Scopece, D., Groiss, H., Stangl, J., Pezzoli, F., Schäffler, F., Schmidt, O. G., Miglio, L., Bauer, G. (2010) Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing. Physical Review Letters, 105 (16). doi:10.1103/physrevlett.105.166102
Hrauda, N., Zhang, J. J., Groiss, H., Gerharz, J. C., Etzelstorfer, T., Stangl, J., Holý, V., Deiter, C., Seeck, O. H., Bauer, G. (2013) Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon. Applied Physics Letters, 102 (3). 32109pp. doi:10.1063/1.4789507
Chen, G., Wintersberger, E., Vastola, G., Groiss, H., Stangl, J., Jantsch, W., Schäffler, F. (2010) Self-assembled Si0.80Ge0.20 nanoripples on Si(1 1 10) substrates. Applied Physics Letters, 96 (10). 103107pp. doi:10.1063/1.3358132
Pachinger, D., Groiss, H., Lichtenberger, H., Stangl, J., Hesser, G., Schäffler, F. (2007) Stranski-Krastanow growth of tensile strained Si islands on Ge (001). Applied Physics Letters, 91 (23). 233106pp. doi:10.1063/1.2820605
Stangl, J., Roch, T., Bauer, G., Kegel, I., Metzger, T. H., Schmidt, O. G., Eberl, K., Kienzle, O., Ernst, F. (2000) Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy. Applied Physics Letters, 77 (24). 3953-3955 doi:10.1063/1.1333683
Lechner, R. T., Springholz, G., Hassan, M., Groiss, H., Kirchschlager, R., Stangl, J., Hrauda, N., Bauer, G. (2010) Phase separation and exchange biasing in the ferromagnetic IV-VI semiconductor Ge1−xMnxTe. Applied Physics Letters, 97 (2). 23101pp. doi:10.1063/1.3459149
Zhang, Jianjun, Rastelli, Armando, Schmidt, Oliver G., Bauer, Günther (2010) Compositional evolution of SiGe islands on patterned Si (001) substrates. Applied Physics Letters, 97 (20). 203103pp. doi:10.1063/1.3514239
Hrauda, N., Zhang, J. J., Stoffel, M., Stangl, J., Bauer, G., Rehman-Khan, A., Holý, V., Schmidt, O. G., Jovanovic, V., Nanver, L. K. (2009) X-ray diffraction study of the composition and strain fields in buried SiGe islands. The European Physical Journal Special Topics, 167 (1). 41-46 doi:10.1140/epjst/e2009-00934-7
Brehm, M, Suzuki, T, Fromherz, T, Zhong, Z, Hrauda, N, Hackl, F, Stangl, J, Schäffler, F, Bauer, G (2009) Combined structural and photoluminescence study of SiGe islands on Si substrates: comparison with realistic energy level calculations. New Journal of Physics, 11. 63021pp. doi:10.1088/1367-2630/11/6/063021
Stangl, J., Daniel, A., Holý, V., Roch, T., Bauer, G., Kegel, I., Metzger, T. H., Wiebach, Th., Schmidt, O. G., Eberl, K. (2001) Strain and composition distribution in uncapped SiGe islands from x-ray diffraction. Applied Physics Letters, 79 (10). 1474-1476 doi:10.1063/1.1392975
 
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