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Shen, X. Q., Matsuhata, H., Okumura, H. (2005) Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates. Applied Physics Letters, 86 (2). 21912pp. doi:10.1063/1.1849836

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Reference TypeJournal (article/letter/editorial)
TitleReduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates
JournalApplied Physics Letters
AuthorsShen, X. Q.Author
Matsuhata, H.Author
Okumura, H.Author
Year2005 (January 10)Volume86
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1849836Search in ResearchGate
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Mindat Ref. ID8542818Long-form Identifiermindat:1:5:8542818:2
GUID0
Full ReferenceShen, X. Q., Matsuhata, H., Okumura, H. (2005) Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates. Applied Physics Letters, 86 (2). 21912pp. doi:10.1063/1.1849836
Plain TextShen, X. Q., Matsuhata, H., Okumura, H. (2005) Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates. Applied Physics Letters, 86 (2). 21912pp. doi:10.1063/1.1849836
In(2005, January) Applied Physics Letters Vol. 86 (2) AIP Publishing

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Shen, X. Q., Okumura, H., Matsuhata, H. (2005) Studies of the annihilation mechanism of threading dislocation in AlN films grown on vicinal sapphire (0001) substrates using transmission electron microscopy. Applied Physics Letters, 87 (10). 101910pp. doi:10.1063/1.2042533
Shen, X. Q., Matsuhata, H., Okumura, H. (2006) Dislocation behaviour in III-nitride epitaxial films grown on vicinal sapphire (0001) substrates. physica status solidi (c), 3 (6). 1566-1569 doi:10.1002/pssc.200565314
Shen, X. Q., Okumura, H., Furuta, K., Nakamura, N. (2006) Electrical properties of AlGaN∕GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy. Applied Physics Letters, 89 (17). 171906pp. doi:10.1063/1.2364864
Shen, X.Q., Yamamoto, T., Nakashima, S., Matsuhata, H., Okumura, H. (2005) GaN/AlN super-lattice structures on vicinal sapphire (0001) substrates grown by rf-MBE. physica status solidi (c), 2 (7). 2385-2388 doi:10.1002/pssc.200461303
Shen, X.Q., Okumura, H. (2007) Surface step morphologies of GaN films grown on vicinal sapphire (0001) substrates by rf-MBE. Journal of Crystal Growth, 300 (1). 75-78 doi:10.1016/j.jcrysgro.2006.10.206
Shen, X.Q., Shimizu, M., Yamamoto, T., Honda, Y., Okumura, H. (2005) Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001) substrates by RF-MBE. Journal of Crystal Growth, 278 (1). 378-382 doi:10.1016/j.jcrysgro.2005.01.036
Shen, X. Q., Sazawa, H., Okumura, H. (2008) rf-MBE growth and characterizations of AlGaN/GaN HEMTs on vicinal sapphire (0001) substrates. physica status solidi (c), 5 (6). 1995-1997 doi:10.1002/pssc.200778669
Shen, X.Q., Shimizu, M., Okumura, H., Xu, F.J., Shen, B., Zhang, G.Y. (2009) Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by MOCVD. Journal of Crystal Growth, 311 (10). 2853-2856 doi:10.1016/j.jcrysgro.2009.01.029
Shen, X.Q., Shimizu, M., Okumura, H., Xu, F.J., Shen, B., Zhang, G.Y. (2009) Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates. Journal of Crystal Growth, 311 (7). 2049-2053 doi:10.1016/j.jcrysgro.2008.12.019
Xie, M. H., Zheng, L. X., Cheung, S. H., Ng, Y. F., Wu, Huasheng, Tong, S. Y., Ohtani, N. (2000) Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy. Applied Physics Letters, 77 (8). 1105-1107 doi:10.1063/1.1289266
Shen, X. Q., Takahashi, T., Rong, X., Chen, G., Wang, X. Q., Shen, B., Matsuhata, H., Ide, T., Shimizu, M. (2013) Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 103 (23). 231908pp. doi:10.1063/1.4841655
 
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