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Biswas, Nivedita, Gurganus, Jason, Misra, Veena, Yang, Yan, Stemmer, Susanne (2005) Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application. Applied Physics Letters, 86 (2). 22105pp. doi:10.1063/1.1849850

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Reference TypeJournal (article/letter/editorial)
TitleEvaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application
JournalApplied Physics Letters
AuthorsBiswas, NiveditaAuthor
Gurganus, JasonAuthor
Misra, VeenaAuthor
Yang, YanAuthor
Stemmer, SusanneAuthor
Year2005 (January 10)Volume86
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1849850Search in ResearchGate
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Mindat Ref. ID8542829Long-form Identifiermindat:1:5:8542829:8
GUID0
Full ReferenceBiswas, Nivedita, Gurganus, Jason, Misra, Veena, Yang, Yan, Stemmer, Susanne (2005) Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application. Applied Physics Letters, 86 (2). 22105pp. doi:10.1063/1.1849850
Plain TextBiswas, Nivedita, Gurganus, Jason, Misra, Veena, Yang, Yan, Stemmer, Susanne (2005) Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application. Applied Physics Letters, 86 (2). 22105pp. doi:10.1063/1.1849850
In(2005, January) Applied Physics Letters Vol. 86 (2) AIP Publishing

See Also

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Biswas, Nivedita, Gurganus, Jason, Misra, Veena (2005) Work function tuning of nickel silicide by co-sputtering nickel and silicon. Applied Physics Letters, 87 (17). 171908pp. doi:10.1063/1.2115072
Chen, Bei, Suh, Youseok, Lee, Jaehoon, Gurganus, Jason, Misra, Veena, Cabral, Cyril (2005) Physical and electrical analysis of RuxYy alloys for gate electrode applications. Applied Physics Letters, 86 (5). 53502pp. doi:10.1063/1.1857093
Jha, Rashmi, Lee, JaeHoon, Majhi, Prashant, Misra, Veena (2005) Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications. Applied Physics Letters, 87 (22). 223503pp. doi:10.1063/1.2136425
Suri, Rahul, Lee, Bongmook, Lichtenwalner, Daniel J., Biswas, Nivedita, Misra, Veena (2008) Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric. Applied Physics Letters, 93 (19). 193504pp. doi:10.1063/1.3007978
Lee, Bongmook, Novak, Steven R., Biswas, Nivedita, Misra, Veena (2012) The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-kDielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications. Japanese Journal of Applied Physics, 51 (1) 11802 doi:10.7567/jjap.51.011802
Lee, Bongmook, Novak, Steven R., Biswas, Nivedita, Misra, Veena (2012) The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-$k$ Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications. Japanese Journal of Applied Physics, 51 (1) 11802 doi:10.1143/jjap.51.011802
Misra, Veena, Heuss, Greg P., Zhong, Huicai (2001) Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2. Applied Physics Letters, 78 (26). 4166-4168 doi:10.1063/1.1380240
Jayanti, Srikant, Misra, Veena (2011) Suppression of dielectric crystallization on metal by introduction of SiO2 layer for metal floating gate memory blocking oxide. Applied Physics Letters, 99 (22). 222903pp. doi:10.1063/1.3661173
Stemmer, Susanne, Chobpattana, Varistha, Rajan, Siddharth (2012) Frequency dispersion in III-V metal-oxide-semiconductor capacitors. Applied Physics Letters, 100 (23). 233510pp. doi:10.1063/1.4724330
Chen, Bei, Biswas, Nivedita, Misra, Veena (2006) Electrical and Physical Analysis of MoTa Alloy for Gate Electrode Applications. Journal of the Electrochemical Society, 153. doi:10.1149/1.2180710
Suri, Rahul, Lichtenwalner, Daniel J., Misra, Veena (2008) Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric. Applied Physics Letters, 92 (24). 243506pp. doi:10.1063/1.2949079
 
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