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Lee, Bongmook, Novak, Steven R., Biswas, Nivedita, Misra, Veena (2012) The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-$k$ Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications. Japanese Journal of Applied Physics, 51 (1) 11802 doi:10.1143/jjap.51.011802

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Reference TypeJournal (article/letter/editorial)
TitleThe Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-$k$ Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications
JournalJapanese Journal of Applied Physics
AuthorsLee, BongmookAuthor
Novak, Steven R.Author
Biswas, NiveditaAuthor
Misra, VeenaAuthor
Year2012 (January)Volume51
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.51.011802Search in ResearchGate
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Mindat Ref. ID15041412Long-form Identifiermindat:1:5:15041412:6
GUID0
Full ReferenceLee, Bongmook, Novak, Steven R., Biswas, Nivedita, Misra, Veena (2012) The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-$k$ Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications. Japanese Journal of Applied Physics, 51 (1) 11802 doi:10.1143/jjap.51.011802
Plain TextLee, Bongmook, Novak, Steven R., Biswas, Nivedita, Misra, Veena (2012) The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-$k$ Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications. Japanese Journal of Applied Physics, 51 (1) 11802 doi:10.1143/jjap.51.011802
In(2012, January) Japanese Journal of Applied Physics Vol. 51 (1) Japan Society of Applied Physics

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Lee, Bongmook, Novak, Steven R., Biswas, Nivedita, Misra, Veena (2012) The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-kDielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications. Japanese Journal of Applied Physics, 51 (1) 11802 doi:10.7567/jjap.51.011802
Suri, Rahul, Lee, Bongmook, Lichtenwalner, Daniel J., Biswas, Nivedita, Misra, Veena (2008) Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric. Applied Physics Letters, 93 (19). 193504pp. doi:10.1063/1.3007978
Jha, Rashmi, Lee, JaeHoon, Majhi, Prashant, Misra, Veena (2005) Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications. Applied Physics Letters, 87 (22). 223503pp. doi:10.1063/1.2136425
Kim, Dongwoo, Lee, Seonhaeng, Kim, Cheolgyu, Oh, Taekyung, Kang, Bongkoo (2012) Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bc10
Kim, Dongwoo, Lee, Seonhaeng, Kim, Cheolgyu, Oh, Taekyung, Kang, Bongkoo (2012) Effect of La2O3Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.7567/jjap.51.02bc10
Biswas, Nivedita, Gurganus, Jason, Misra, Veena, Yang, Yan, Stemmer, Susanne (2005) Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application. Applied Physics Letters, 86 (2). 22105pp. doi:10.1063/1.1849850
Huang, Chih-Feng, Tsui, Bing-Yue (2006) Investigation of NiSi Fully-Silicided Gate on SiO2and HfO2for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 45 (7) 5702-5707 doi:10.1143/jjap.45.5702
Lee, Nam-Hyun, Kim, Hyung-wook, Kang, Bongkoo (2012) Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bc13
Nakajima, Kazuaki, Koyama, Masato, Aoyama, Tomonori, Nishiyama, Akira, Eguchi, Kazuhiro, Suguro, Kyoichi (2007) Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications. Japanese Journal of Applied Physics, 46 (4) 1885-1887 doi:10.1143/jjap.46.1885
Hosoi, Takuji, Sano, Kosuke, Hosawa, Kosei, Shibahara, Kentaro (2007) Formation Kinetics and Work Function Tuning of Pd2Si Fully Silicided Metal Gate. Japanese Journal of Applied Physics, 46 (4) 1929-1933 doi:10.1143/jjap.46.1929
Lim, Andy Eu-Jin, Fang, Wei-Wei, Liu, Fangyue, Lee, Rinus Tek Po, Samudra, Ganesh, Kwong, Dim-Lee, Yeo, Yee-Chia (2007) Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers. Applied Physics Letters, 91 (17). 172115pp. doi:10.1063/1.2803762
 
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