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Yoshida, S., Sekiguchi, T., Itoh, K. M. (2005) Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction. Applied Physics Letters, 87 (3). 31903pp. doi:10.1063/1.1995946

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Reference TypeJournal (article/letter/editorial)
TitleAtomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction
JournalApplied Physics Letters
AuthorsYoshida, S.Author
Sekiguchi, T.Author
Itoh, K. M.Author
Year2005 (July 18)Volume87
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.1995946Search in ResearchGate
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Mindat Ref. ID8545765Long-form Identifiermindat:1:5:8545765:2
GUID0
Full ReferenceYoshida, S., Sekiguchi, T., Itoh, K. M. (2005) Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction. Applied Physics Letters, 87 (3). 31903pp. doi:10.1063/1.1995946
Plain TextYoshida, S., Sekiguchi, T., Itoh, K. M. (2005) Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction. Applied Physics Letters, 87 (3). 31903pp. doi:10.1063/1.1995946
In(2005, July) Applied Physics Letters Vol. 87 (3) AIP Publishing

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Sekiguchi, Takeharu, Yoshida, Shunji, Shiren, Yohei, Itoh, Kohei M., Mysliveček, Josef, Voigtländer, Bert (2007) Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111). Journal of Applied Physics, 101 (8). 81702pp. doi:10.1063/1.2722726
Sekiguchi, Takeharu, Yoshida, Shunji, Itoh, Kohei M., Mysliveček, Josef, Voigtländer, Bert (2007) One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111). Applied Physics Letters, 90 (1). 13108pp. doi:10.1063/1.2426890
Sekiguchi, Takeharu, Yoshida, Shunji, Itoh, Kohei M. (2005) Self-Assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface. Physical Review Letters, 95 (10). doi:10.1103/physrevlett.95.106101
Degawa, M., Minoda, H., Tanishiro, Y., Yagi, K. (2001) In-phase step wandering on Si(111) vicinal surfaces: Effect of direct current heating tilted from the step-down direction. Physical Review B, 63 (4) doi:10.1103/physrevb.63.045309
Hashimoto, A., Saitoh, T., Tamura, M., Itoh, T. (1994) Insituobservations of As atoms at step sites of vicinal Si(100) surfaces by coaxial impact‐collision ion scattering spectroscopy. Journal of Applied Physics, 76 (3). 1592-1597 doi:10.1063/1.357738
Kwon, T., Phaneuf, R. J., Kan, H.-C. (2006) Length-scale dependence of the step bunch self-organization on patterned vicinal Si(111) surfaces. Applied Physics Letters, 88 (7). 71914pp. doi:10.1063/1.2175501
Itoh, H., Narui, S., Zhang, Z., Ichonokawa, T. (1992) Structure of double-atomic-height steps in Si(001) vicinal surfaces observed by scanning tunneling microscopy. Surface Science Letters, 277 (3). doi:10.1016/0167-2584(92)90136-s
Ohno, T. R., Williams, Ellen D. (1989) Arsenic‐induced step rearrangements on vicinal Si (111) substrates. Applied Physics Letters, 55 (25). 2628-2630 doi:10.1063/1.101957
Itoh, H., Narui, S., Zhang, Z., Ichonokawa, T. (1992) Structure of double-atomic-height steps in Si(001) vicinal surfaces observed by scanning tunneling microscopy. Surface Science, 277 (3). doi:10.1016/0039-6028(92)90758-x
Zhu, Jian-hong, Brunner, K., Abstreiter, G. (1998) Observation of step bunches in units of 4 ML on vicinal Si(113) surfaces. Applied Physics Letters, 73 (17). 2438-2440 doi:10.1063/1.122474
Vanormelingen, K., Paredis, K., Vantomme, A. (2005) The influence of surface steps on the formation of Ag-induced reconstructions on Si(111). Applied Physics Letters, 86 (16). 161906pp. doi:10.1063/1.1906310
 
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