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Sekiguchi, Takeharu, Yoshida, Shunji, Itoh, Kohei M., Mysliveček, Josef, Voigtländer, Bert (2007) One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111). Applied Physics Letters, 90 (1). 13108pp. doi:10.1063/1.2426890

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Reference TypeJournal (article/letter/editorial)
TitleOne-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)
JournalApplied Physics Letters
AuthorsSekiguchi, TakeharuAuthor
Yoshida, ShunjiAuthor
Itoh, Kohei M.Author
Mysliveček, JosefAuthor
Voigtländer, BertAuthor
Year2007 (January)Volume90
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.2426890Search in ResearchGate
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Mindat Ref. ID8552607Long-form Identifiermindat:1:5:8552607:7
GUID0
Full ReferenceSekiguchi, Takeharu, Yoshida, Shunji, Itoh, Kohei M., Mysliveček, Josef, Voigtländer, Bert (2007) One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111). Applied Physics Letters, 90 (1). 13108pp. doi:10.1063/1.2426890
Plain TextSekiguchi, Takeharu, Yoshida, Shunji, Itoh, Kohei M., Mysliveček, Josef, Voigtländer, Bert (2007) One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111). Applied Physics Letters, 90 (1). 13108pp. doi:10.1063/1.2426890
In(2007, January) Applied Physics Letters Vol. 90 (1) AIP Publishing

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Sekiguchi, Takeharu, Yoshida, Shunji, Shiren, Yohei, Itoh, Kohei M., Mysliveček, Josef, Voigtländer, Bert (2007) Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111). Journal of Applied Physics, 101 (8). 81702pp. doi:10.1063/1.2722726
Yoshida, S., Sekiguchi, T., Itoh, K. M. (2005) Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction. Applied Physics Letters, 87 (3). 31903pp. doi:10.1063/1.1995946
Sekiguchi, Takeharu, Yoshida, Shunji, Itoh, Kohei M. (2005) Self-Assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface. Physical Review Letters, 95 (10). doi:10.1103/physrevlett.95.106101
Romanyuk, K., Mysliveček, J., Cherepanov, V., Sekiguchi, T., Yoshida, S., Itoh, K. M., Voigtländer, B. (2007) Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy. Physical Review B, 75 (24) doi:10.1103/physrevb.75.241309
Paul, Neelima, Asaoka, Hidehito, Mysliveček, Josef, Voigtländer, Bert (2004) Growth mechanisms in Ge/Si(111) heteroepitaxy with and without Bi as a surfactant. Physical Review B, 69 (19) doi:10.1103/physrevb.69.193402
Mysliveček, Josef, Dvořák, Filip, Stróżecka, Anna, Voigtländer, Bert (2010) Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures onSi(111)−3×3-Bi. Physical Review B, 81 (24) doi:10.1103/physrevb.81.245427
Stróżecka, Anna, Muthukumar, Kaliappan, Dybek, Aneta, Dennis, T. John, Larsson, J. Andreas, Mysliveček, Josef, Voigtländer, Bert (2009) Modification of the conductance of single fullerene molecules by endohedral doping. Applied Physics Letters, 95 (13). 133118pp. doi:10.1063/1.3236529
Jaschinsky, Philipp, Wensorra, Jakob, Lepsa, Mihail Ion, Mysliveček, Josef, Voigtländer, Bert (2008) Nanoscale charge transport measurements using a double-tip scanning tunneling microscope. Journal of Applied Physics, 104 (9). 94307pp. doi:10.1063/1.3006891
Cherepanov, Vasily, Voigtländer, Bert (2002) Influence of strain on diffusion at Ge(111) surfaces. Applied Physics Letters, 81 (25). 4745-4747 doi:10.1063/1.1530730
Paul, Neelima, Voigtländer, Bert (2004) Removal of the surfactant in Bi/Ge/Si(111) surfactant-mediated epitaxy. Surface Science, 551 (1). 80-90 doi:10.1016/j.susc.2003.11.046
Romanyuk, Konstantin, Cherepanov, Vasily, Voigtländer, Bert (2007) Symmetry Breaking in the Growth of Two-Dimensional Islands on Si(111). Physical Review Letters, 99 (12). doi:10.1103/physrevlett.99.126103
 
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