Pauc, N., Phillips, M. R., Aimez, V., Drouin, D. (2006) Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence. Applied Physics Letters, 89 (16). 161905pp. doi:10.1063/1.2357881

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Reference Type	Journal (article/letter/editorial)
Title	Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence
Journal	Applied Physics Letters
Authors	Pauc, N.		Author
	Phillips, M. R.		Author
	Aimez, V.		Author
	Drouin, D.		Author
Year	2006 (October 16)	Volume	89
Issue	16
Publisher	AIP Publishing
DOI	doi:10.1063/1.2357881Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8550105	Long-form Identifier	mindat:1:5:8550105:0
GUID	0
Full Reference	Pauc, N., Phillips, M. R., Aimez, V., Drouin, D. (2006) Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence. Applied Physics Letters, 89 (16). 161905pp. doi:10.1063/1.2357881
Plain Text	Pauc, N., Phillips, M. R., Aimez, V., Drouin, D. (2006) Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence. Applied Physics Letters, 89 (16). 161905pp. doi:10.1063/1.2357881
In	(2006, October) Applied Physics Letters Vol. 89 (16) AIP Publishing

	Pauc, N., Phillips, M. R., Aimez, V., Drouin, D. (2010) Response to “Comment on ‘Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence’” [Appl. Phys. Lett. 97, 166101 (2010)]. Applied Physics Letters, 97 (16). 166102pp. doi:10.1063/1.3499663
	Yakimov, E. B. (2010) Comment on “Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence” [Appl. Phys. Lett. 89, 161905 (2006)]. Applied Physics Letters, 97 (16). 166101pp. doi:10.1063/1.3499662
	Dupuy, E., Morris, D., Pauc, N., Aimez, V., Gendry, M., Drouin, D. (2009) Carrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging. Applied Physics Letters, 94 (2). 22113pp. doi:10.1063/1.3072613
	Phillips, MR, Drouin, D, Pauc, N (2006) Probing Carrier Behavior at the Nanoscale in Gallium Nitride using Low Voltage Cathodoluminescence. Microscopy and Microanalysis, 12. 156-157 doi:10.1017/s1431927606069352
	Albrecht, M., Weyher, J. L., Lucznik, B., Grzegory, I., Porowski, S. (2008) Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching. Applied Physics Letters, 92 (23). 231909pp. doi:10.1063/1.2928226
	Dupuy, E, Pauc, N, Morris, D, Gendry, M, Drouin, D (2010) Low-Voltage Cathodoluminescence as a High Spatial Resolution Technique for Nanostructure Characterization. Microscopy and Microanalysis, 16. 820-821 doi:10.1017/s1431927610062719
	Feng, Gan, Suda, Jun, Kimoto, Tsunenobu (2011) Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping. Journal of Applied Physics, 110 (3). 33525pp. doi:10.1063/1.3622336
	Higgs, V., Kittler, M. (1993) Investigation of the recombination activity of misfit dislocations in Si/SiGe epilayers by cathodoluminescence imaging and the electron beam induced current technique. Applied Physics Letters, 63 (15). 2085-2087 doi:10.1063/1.110600
	Demers, Hendrix, Poirier-Demers, Nicolas, Phillips, Matthew R., de Jonge, Niels, Drouin, Dominique (2012) Three-Dimensional Electron Energy Deposition Modeling of Cathodoluminescence Emission near Threading Dislocations in GaN and Electron-Beam Lithography Exposure Parameters for a PMMA Resist. Microscopy and Microanalysis, 18 (6). 1220-1228 doi:10.1017/s1431927612013414
	Yoshikawa, M., Sugie, R., Murakami, M., Matsunobe, T., Matsuda, K., Ishida, H. (2006) Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence. Applied Physics Letters, 88 (16). 161905pp. doi:10.1063/1.2190270
	Hughes, Eamonn T., Shah, Rushabh D., Mukherjee, Kunal (2019) Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering. Journal of Applied Physics, 125 (16). 165702pp. doi:10.1063/1.5088844

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Pauc, N., Phillips, M. R., Aimez, V., Drouin, D. (2006) Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence. Applied Physics Letters, 89 (16). 161905pp. doi:10.1063/1.2357881

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