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Dupuy, E., Morris, D., Pauc, N., Aimez, V., Gendry, M., Drouin, D. (2009) Carrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging. Applied Physics Letters, 94 (2). 22113pp. doi:10.1063/1.3072613

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Reference TypeJournal (article/letter/editorial)
TitleCarrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging
JournalApplied Physics Letters
AuthorsDupuy, E.Author
Morris, D.Author
Pauc, N.Author
Aimez, V.Author
Gendry, M.Author
Drouin, D.Author
Year2009 (January 12)Volume94
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.3072613Search in ResearchGate
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Mindat Ref. ID8574145Long-form Identifiermindat:1:5:8574145:4
GUID0
Full ReferenceDupuy, E., Morris, D., Pauc, N., Aimez, V., Gendry, M., Drouin, D. (2009) Carrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging. Applied Physics Letters, 94 (2). 22113pp. doi:10.1063/1.3072613
Plain TextDupuy, E., Morris, D., Pauc, N., Aimez, V., Gendry, M., Drouin, D. (2009) Carrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging. Applied Physics Letters, 94 (2). 22113pp. doi:10.1063/1.3072613
In(2009, January) Applied Physics Letters Vol. 94 (2) AIP Publishing

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Pauc, N., Phillips, M. R., Aimez, V., Drouin, D. (2006) Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence. Applied Physics Letters, 89 (16). 161905pp. doi:10.1063/1.2357881
Dupuy, E, Pauc, N, Morris, D, Gendry, M, Drouin, D (2010) Low-Voltage Cathodoluminescence as a High Spatial Resolution Technique for Nanostructure Characterization. Microscopy and Microanalysis, 16. 820-821 doi:10.1017/s1431927610062719
Pauc, N., Phillips, M. R., Aimez, V., Drouin, D. (2010) Response to “Comment on ‘Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence’” [Appl. Phys. Lett. 97, 166101 (2010)]. Applied Physics Letters, 97 (16). 166102pp. doi:10.1063/1.3499663
Phillips, MR, Drouin, D, Pauc, N (2006) Probing Carrier Behavior at the Nanoscale in Gallium Nitride using Low Voltage Cathodoluminescence. Microscopy and Microanalysis, 12. 156-157 doi:10.1017/s1431927606069352
Dupuy, E., Regreny, P., Robach, Y., Gendry, M., Chauvin, N., Tranvouez, E., Bremond, G., Bru-Chevallier, C., Patriarche, G. (2006) Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001). Applied Physics Letters, 89 (12). 123112pp. doi:10.1063/1.2354010
Morris, D., Perret, N., Fafard, S. (1999) Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots. Applied Physics Letters, 75 (23). 3593-3595 doi:10.1063/1.125398
Amdursky, N., Molotskii, M., Gazit, E., Rosenman, G. (2009) Self-assembled bioinspired quantum dots: Optical properties. Applied Physics Letters, 94 (26). 261907pp. doi:10.1063/1.3167354
Salem, B., Aimez, V., Morris, D., Turala, A., Regreny, P., Gendry, M. (2005) Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing. Applied Physics Letters, 87 (24). 241115pp. doi:10.1063/1.2142330
Marquardt, B., Geller, M., Lorke, A., Reuter, D., Wieck, A. D. (2009) Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters, 95 (2). 22113pp. doi:10.1063/1.3175724
Rich, D. H., Zhang, C., Mukhametzhanov, I., Madhukar, A. (2000) Cathodoluminescence wavelength imaging of μm-scale energy variations in InAs/GaAs self-assembled quantum dots. Applied Physics Letters, 76 (24). 3597-3599 doi:10.1063/1.126718
Genest, J, Dubowski, J J, Aimez, V, Pauc, N, Drouin, D, Post, M (2007) UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures. Journal of Physics: Conference Series, 59. 605-609 doi:10.1088/1742-6596/59/1/129
 
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