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Chou, H. T., Goldhaber-Gordon, D., Schmult, S., Manfra, M. J., Sergent, A. M., Molnar, R. J. (2006) Single-electron transistors in GaN∕AlGaN heterostructures. Applied Physics Letters, 89 (3). 33104pp. doi:10.1063/1.2226454

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Reference TypeJournal (article/letter/editorial)
TitleSingle-electron transistors in GaN∕AlGaN heterostructures
JournalApplied Physics Letters
AuthorsChou, H. T.Author
Goldhaber-Gordon, D.Author
Schmult, S.Author
Manfra, M. J.Author
Sergent, A. M.Author
Molnar, R. J.Author
Year2006 (July 17)Volume89
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.2226454Search in ResearchGate
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Mindat Ref. ID8551736Long-form Identifiermindat:1:5:8551736:1
GUID0
Full ReferenceChou, H. T., Goldhaber-Gordon, D., Schmult, S., Manfra, M. J., Sergent, A. M., Molnar, R. J. (2006) Single-electron transistors in GaN∕AlGaN heterostructures. Applied Physics Letters, 89 (3). 33104pp. doi:10.1063/1.2226454
Plain TextChou, H. T., Goldhaber-Gordon, D., Schmult, S., Manfra, M. J., Sergent, A. M., Molnar, R. J. (2006) Single-electron transistors in GaN∕AlGaN heterostructures. Applied Physics Letters, 89 (3). 33104pp. doi:10.1063/1.2226454
In(2006, July) Applied Physics Letters Vol. 89 (3) AIP Publishing

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Chou, H. T., Lüscher, S., Goldhaber-Gordon, D., Manfra, M. J., Sergent, A. M., West, K. W., Molnar, R. J. (2005) High-quality quantum point contacts in GaN∕AlGaN heterostructures. Applied Physics Letters, 86 (7). 73108pp. doi:10.1063/1.1862339
Schmult, S., Manfra, M. J., Sergent, A. M., Punnoose, A., Chou, H. T., Goldhaber-Gordon, D., Molnar, R. J. (2006) Quantum transport in high mobility AlGaN/GaN 2DEGs and nanostructures. physica status solidi (b), 243 (7). 1706-1712 doi:10.1002/pssb.200565378
Mitrofanov, O., Schmult, S., Manfra, M. J., Siegrist, T., Weimann, N. G., Sergent, A. M., Molnar, R. J. (2006) High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors. Applied Physics Letters, 88 (17). 171101pp. doi:10.1063/1.2195547
Manfra, M. J., Baldwin, K. W., Sergent, A. M., Molnar, R. J., Caissie, J. (2004) Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures. Applied Physics Letters, 85 (10). 1722-1724 doi:10.1063/1.1784887
Schmult, S., Siegrist, T., Sergent, A. M., Manfra, M. J., Molnar, R. J. (2007) Optimized growth of lattice-matched InxAl1−xN∕GaN heterostructures by molecular beam epitaxy. Applied Physics Letters, 90 (2). 21922pp. doi:10.1063/1.2430940
Manfra, M. J., Baldwin, K. W., Sergent, A. M., West, K. W., Molnar, R. J., Caissie, J. (2004) Electron mobility exceeding 160000cm2∕Vs in AlGaN∕GaN heterostructures grown by molecular-beam epitaxy. Applied Physics Letters, 85 (22). 5394-5396 doi:10.1063/1.1824176
Manfra, M. J., Simon, S. H., Baldwin, K. W., Sergent, A. M., West, K. W., Molnar, R. J., Caissie, J. (2004) Quantum and transport lifetimes in a tunable low-density AlGaN∕GaN two-dimensional electron gas. Applied Physics Letters, 85 (22). 5278-5280 doi:10.1063/1.1827939
Syed, S., Manfra, M. J., Wang, Y. J., Molnar, R. J., Stormer, H. L. (2004) Electron scattering in AlGaN/GaN structures. Applied Physics Letters, 84 (9). 1507-1509 doi:10.1063/1.1655704
Henriksen, E. A., Syed, S., Ahmadian, Y., Manfra, M. J., Baldwin, K. W., Sergent, A. M., Molnar, R. J., Stormer, H. L. (2005) Acoustic phonon scattering in a low density, high mobility AlGaN∕GaN field-effect transistor. Applied Physics Letters, 86 (25). 252108pp. doi:10.1063/1.1954893
Schmult, S., Manfra, M. J., Punnoose, A., Sergent, A. M., Baldwin, K. W., Molnar, R. J. (2006) Large Bychkov-Rashba spin-orbit coupling in high-mobilityGaN∕AlxGa1−xNheterostructures. Physical Review B, 74 (3) doi:10.1103/physrevb.74.033302
Daulton, J. W., Molnar, R. J., Brinkerhoff, J. A., Weir, T. J., Hollis, M. A., Zaslavsky, A. (2024) Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors. Applied Physics Letters, 124 (6) doi:10.1063/5.0193571
 
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