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Schmult, S., Siegrist, T., Sergent, A. M., Manfra, M. J., Molnar, R. J. (2007) Optimized growth of lattice-matched InxAl1−xN∕GaN heterostructures by molecular beam epitaxy. Applied Physics Letters, 90 (2). 21922pp. doi:10.1063/1.2430940

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Reference TypeJournal (article/letter/editorial)
TitleOptimized growth of lattice-matched InxAl1−xN∕GaN heterostructures by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsSchmult, S.Author
Siegrist, T.Author
Sergent, A. M.Author
Manfra, M. J.Author
Molnar, R. J.Author
Year2007 (January 8)Volume90
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2430940Search in ResearchGate
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Mindat Ref. ID8554064Long-form Identifiermindat:1:5:8554064:2
GUID0
Full ReferenceSchmult, S., Siegrist, T., Sergent, A. M., Manfra, M. J., Molnar, R. J. (2007) Optimized growth of lattice-matched InxAl1−xN∕GaN heterostructures by molecular beam epitaxy. Applied Physics Letters, 90 (2). 21922pp. doi:10.1063/1.2430940
Plain TextSchmult, S., Siegrist, T., Sergent, A. M., Manfra, M. J., Molnar, R. J. (2007) Optimized growth of lattice-matched InxAl1−xN∕GaN heterostructures by molecular beam epitaxy. Applied Physics Letters, 90 (2). 21922pp. doi:10.1063/1.2430940
In(2007, January) Applied Physics Letters Vol. 90 (2) AIP Publishing

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Chou, H. T., Goldhaber-Gordon, D., Schmult, S., Manfra, M. J., Sergent, A. M., Molnar, R. J. (2006) Single-electron transistors in GaN∕AlGaN heterostructures. Applied Physics Letters, 89 (3). 33104pp. doi:10.1063/1.2226454
Mitrofanov, O., Schmult, S., Manfra, M. J., Siegrist, T., Weimann, N. G., Sergent, A. M., Molnar, R. J. (2006) High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors. Applied Physics Letters, 88 (17). 171101pp. doi:10.1063/1.2195547
Manfra, M. J., Baldwin, K. W., Sergent, A. M., West, K. W., Molnar, R. J., Caissie, J. (2004) Electron mobility exceeding 160000cm2∕Vs in AlGaN∕GaN heterostructures grown by molecular-beam epitaxy. Applied Physics Letters, 85 (22). 5394-5396 doi:10.1063/1.1824176
Manfra, M. J., Baldwin, K. W., Sergent, A. M., Molnar, R. J., Caissie, J. (2004) Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures. Applied Physics Letters, 85 (10). 1722-1724 doi:10.1063/1.1784887
Chou, H. T., Lüscher, S., Goldhaber-Gordon, D., Manfra, M. J., Sergent, A. M., West, K. W., Molnar, R. J. (2005) High-quality quantum point contacts in GaN∕AlGaN heterostructures. Applied Physics Letters, 86 (7). 73108pp. doi:10.1063/1.1862339
Manfra, M. J., Pfeiffer, L. N., West, K. W., Stormer, H. L., Baldwin, K. W., Hsu, J. W. P., Lang, D. V., Molnar, R. J. (2000) High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy. Applied Physics Letters, 77 (18). 2888-2890 doi:10.1063/1.1323856
Malis, O., Edmunds, C., Manfra, M. J., Sivco, D. L. (2009) Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices. Applied Physics Letters, 94 (16). 161111pp. doi:10.1063/1.3120551
Manfra, M. J., Weimann, N. G., Hsu, J. W. P., Pfeiffer, L. N., West, K. W., Syed, S., Stormer, H. L., Pan, W., Lang, D. V., Chu, S. N. G., Kowach, G., Sergent, A. M., Caissie, J., Molvar, K. M., Mahoney, L. J., Molnar, R. J. (2002) High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy. Journal of Applied Physics, 92 (1). 338-345 doi:10.1063/1.1484227
Hsu, J. W. P., Manfra, M. J., Molnar, R. J., Heying, B., Speck, J. S. (2002) Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates. Applied Physics Letters, 81 (1). 79-81 doi:10.1063/1.1490147
Hsu, J. W. P., Manfra, M. J., Chu, S. N. G., Chen, C. H., Pfeiffer, L. N., Molnar, R. J. (2001) Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy. Applied Physics Letters, 78 (25). 3980-3982 doi:10.1063/1.1379789
Schmult, S., Manfra, M. J., Sergent, A. M., Punnoose, A., Chou, H. T., Goldhaber-Gordon, D., Molnar, R. J. (2006) Quantum transport in high mobility AlGaN/GaN 2DEGs and nanostructures. physica status solidi (b), 243 (7). 1706-1712 doi:10.1002/pssb.200565378
 
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