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Yaglioglu, B., Yeom, H. Y., Beresford, R., Paine, D. C. (2006) High-mobility amorphous In2O3–10wt%ZnO thin film transistors. Applied Physics Letters, 89 (6). 62103pp. doi:10.1063/1.2335372

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Reference TypeJournal (article/letter/editorial)
TitleHigh-mobility amorphous In2O3–10wt%ZnO thin film transistors
JournalApplied Physics Letters
AuthorsYaglioglu, B.Author
Yeom, H. Y.Author
Beresford, R.Author
Paine, D. C.Author
Year2006 (August 7)Volume89
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.2335372Search in ResearchGate
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Mindat Ref. ID8552132Long-form Identifiermindat:1:5:8552132:8
GUID0
Full ReferenceYaglioglu, B., Yeom, H. Y., Beresford, R., Paine, D. C. (2006) High-mobility amorphous In2O3–10wt%ZnO thin film transistors. Applied Physics Letters, 89 (6). 62103pp. doi:10.1063/1.2335372
Plain TextYaglioglu, B., Yeom, H. Y., Beresford, R., Paine, D. C. (2006) High-mobility amorphous In2O3–10wt%ZnO thin film transistors. Applied Physics Letters, 89 (6). 62103pp. doi:10.1063/1.2335372
In(2006, August) Applied Physics Letters Vol. 89 (6) AIP Publishing

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Yaglioglu, Burag, Yeom, Hyo-Young, Paine, David C. (2005) Crystallization of amorphous In2O3–10 wt % ZnO thin films annealed in air. Applied Physics Letters, 86 (26). 261908pp. doi:10.1063/1.1977209
Kitamura, M., Arakawa, Y. (2006) High-performance pentacene thin-film transistors with high dielectric constant gate insulators. Applied Physics Letters, 89 (22). 223525pp. doi:10.1063/1.2400399
Lee, Sunghwan, Paine, David C. (2014) Metallization selection and the performance of amorphous In-Zn-O thin film transistors. Applied Physics Letters, 104 (25). 252103pp. doi:10.1063/1.4885118
Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J., Keszler, D. A. (2005) High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Applied Physics Letters, 86 (1). 13503pp. doi:10.1063/1.1843286
Wang, M. C., Chang, T. C., Liu, Po-Tsun, Xiao, R. W., Lin, L. F., Li, Y. Y., Huang, F. S., Chen, J. R. (2007) Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu∕CuMg as source/drain metal. Applied Physics Letters, 91 (6). 62103pp. doi:10.1063/1.2767147
Hsieh, Hsing-Hung, Wu, Chung-Chih (2006) Scaling behavior of ZnO transparent thin-film transistors. Applied Physics Letters, 89 (4). 41109pp. doi:10.1063/1.2235895
Gleskova, H., Wagner, S. (2001) Electron mobility in amorphous silicon thin-film transistors under compressive strain. Applied Physics Letters, 79 (20). 3347-3349 doi:10.1063/1.1418254
Paine, David C., Whitson, T., Janiac, D., Beresford, R., Yang, Cleva Ow, Lewis, Brian (1999) A study of low temperature crystallization of amorphous thin film indium–tin–oxide. Journal of Applied Physics, 85 (12). 8445-8450 doi:10.1063/1.370695
Carcia, P. F., McLean, R. S., Reilly, M. H. (2006) High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition. Applied Physics Letters, 88 (12). 123509pp. doi:10.1063/1.2188379
Hoffman, R. L. (2004) ZnO-channel thin-film transistors: Channel mobility. Journal of Applied Physics, 95 (10). 5813-5819 doi:10.1063/1.1712015
Na, Jong H., Kitamura, M., Arakawa, Y. (2008) High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes. Applied Physics Letters, 93 (6). 63501pp. doi:10.1063/1.2969780
 
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