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Wang, M. C., Chang, T. C., Liu, Po-Tsun, Xiao, R. W., Lin, L. F., Li, Y. Y., Huang, F. S., Chen, J. R. (2007) Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu∕CuMg as source/drain metal. Applied Physics Letters, 91 (6). 62103pp. doi:10.1063/1.2767147

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Reference TypeJournal (article/letter/editorial)
TitleSuppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu∕CuMg as source/drain metal
JournalApplied Physics Letters
AuthorsWang, M. C.Author
Chang, T. C.Author
Liu, Po-TsunAuthor
Xiao, R. W.Author
Lin, L. F.Author
Li, Y. Y.Author
Huang, F. S.Author
Chen, J. R.Author
Year2007 (August 6)Volume91
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.2767147Search in ResearchGate
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Mindat Ref. ID8559675Long-form Identifiermindat:1:5:8559675:7
GUID0
Full ReferenceWang, M. C., Chang, T. C., Liu, Po-Tsun, Xiao, R. W., Lin, L. F., Li, Y. Y., Huang, F. S., Chen, J. R. (2007) Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu∕CuMg as source/drain metal. Applied Physics Letters, 91 (6). 62103pp. doi:10.1063/1.2767147
Plain TextWang, M. C., Chang, T. C., Liu, Po-Tsun, Xiao, R. W., Lin, L. F., Li, Y. Y., Huang, F. S., Chen, J. R. (2007) Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu∕CuMg as source/drain metal. Applied Physics Letters, 91 (6). 62103pp. doi:10.1063/1.2767147
In(2007, August) Applied Physics Letters Vol. 91 (6) AIP Publishing

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