Vote for your favorite mineral in #MinCup25! - Carpathite vs. Leucite
Brace for oddness in a match between one of the very few hydrocarbon minerals carpathite and the temperature-flipping mineral leucite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Yang, Y.-J., Ho, W. S., Huang, C.-F., Chang, S. T., Liu, C. W. (2007) Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 91 (10). 102103pp. doi:10.1063/1.2779845

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleElectron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors
JournalApplied Physics Letters
AuthorsYang, Y.-J.Author
Ho, W. S.Author
Huang, C.-F.Author
Chang, S. T.Author
Liu, C. W.Author
Year2007 (September 3)Volume91
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2779845Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8555784Long-form Identifiermindat:1:5:8555784:6
GUID0
Full ReferenceYang, Y.-J., Ho, W. S., Huang, C.-F., Chang, S. T., Liu, C. W. (2007) Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 91 (10). 102103pp. doi:10.1063/1.2779845
Plain TextYang, Y.-J., Ho, W. S., Huang, C.-F., Chang, S. T., Liu, C. W. (2007) Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 91 (10). 102103pp. doi:10.1063/1.2779845
In(2007, September) Applied Physics Letters Vol. 91 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Chen, Y.-T., Lan, H.-S., Hsu, W., Fu, Y.-C., Lin, J.-Y., Liu, C. W. (2011) Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates. Applied Physics Letters, 99 (2). 22106pp. doi:10.1063/1.3604417
Lan, H.-S., Chen, Y.-T., Hsu, William, Chang, H.-C., Lin, J.-Y., Chang, W.-C., Liu, C. W. (2011) Electron scattering in Ge metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 99 (11). 112109pp. doi:10.1063/1.3640237
Yang, Peizhen, Lau, W. S., Ho, V., Loh, C. H., Siah, S. Y., Chan, L. (2007) Effect of tensile stress on the various components of the off current of n-channel metal-oxide-semiconductor transistors. Applied Physics Letters, 91 (7). 73514pp. doi:10.1063/1.2769960
Ho, Hsiao-shuo, Chang, Ingram Yin-ku, Lee, Joseph Ya-min (2007) The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics. Applied Physics Letters, 91 (17). 173510pp. doi:10.1063/1.2802729
Wu, J. W., You, J. W., Ma, H. C., Cheng, C. C., Chang, C. S., Huang, G. W., Wang, T. (2004) Valence-band tunneling induced low frequency noise in ultrathin oxide (15Å) n-type metal-oxide-semiconductor field effect transistors. Applied Physics Letters, 85 (21). 5076-5077 doi:10.1063/1.1827930
Chen, Xiangdong, Liu, Kou-Chen, Jayanarayanan, Sankaran Kartik, Banerjee, Sanjay (2001) Electron mobility enhancement in strained SiGe vertical n-type metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 78 (3). 377-379 doi:10.1063/1.1342038
Lin, H. C., Yang, T., Sharifi, H., Kim, S. K., Xuan, Y., Shen, T., Mohammadi, S., Ye, P. D. (2007) Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric. Applied Physics Letters, 91 (21). 212101pp. doi:10.1063/1.2814052
Iwase, Y., Arai, F., Sugano, T. (1988) Enhancement of effective electron mobility in the channel of InP metal‐insulator‐semiconductor field‐effect transistors. Applied Physics Letters, 53 (7). 565-567 doi:10.1063/1.99858
Lan, H.-S., Liu, C. W. (2014) Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors. Applied Physics Letters, 104 (19). 192101pp. doi:10.1063/1.4876441
Huang, C.-F., Yang, Y.-J., Peng, C.-Y., Yuan, F., Liu, C. W. (2006) Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors. Applied Physics Letters, 89 (10). 103502pp. doi:10.1063/1.2344855
Zheng, J. F., Tsai, W., Lin, T. D., Lee, Y. J., Chen, C. P., Hong, M., Kwo, J., Cui, S., Ma, T. P. (2007) Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion. Applied Physics Letters, 91 (22). 223502pp. doi:10.1063/1.2817742
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Š OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 6, 2025 20:23:35
Go to top of page