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Lan, H.-S., Chen, Y.-T., Hsu, William, Chang, H.-C., Lin, J.-Y., Chang, W.-C., Liu, C. W. (2011) Electron scattering in Ge metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 99 (11). 112109pp. doi:10.1063/1.3640237

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Reference TypeJournal (article/letter/editorial)
TitleElectron scattering in Ge metal-oxide-semiconductor field-effect transistors
JournalApplied Physics Letters
AuthorsLan, H.-S.Author
Chen, Y.-T.Author
Hsu, WilliamAuthor
Chang, H.-C.Author
Lin, J.-Y.Author
Chang, W.-C.Author
Liu, C. W.Author
Year2011 (September 12)Volume99
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3640237Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8595916Long-form Identifiermindat:1:5:8595916:9
GUID0
Full ReferenceLan, H.-S., Chen, Y.-T., Hsu, William, Chang, H.-C., Lin, J.-Y., Chang, W.-C., Liu, C. W. (2011) Electron scattering in Ge metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 99 (11). 112109pp. doi:10.1063/1.3640237
Plain TextLan, H.-S., Chen, Y.-T., Hsu, William, Chang, H.-C., Lin, J.-Y., Chang, W.-C., Liu, C. W. (2011) Electron scattering in Ge metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 99 (11). 112109pp. doi:10.1063/1.3640237
In(2011, September) Applied Physics Letters Vol. 99 (11) AIP Publishing

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