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Ho, Hsiao-shuo, Chang, Ingram Yin-ku, Lee, Joseph Ya-min (2007) The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics. Applied Physics Letters, 91 (17). 173510pp. doi:10.1063/1.2802729

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Reference TypeJournal (article/letter/editorial)
TitleThe temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics
JournalApplied Physics Letters
AuthorsHo, Hsiao-shuoAuthor
Chang, Ingram Yin-kuAuthor
Lee, Joseph Ya-minAuthor
Year2007 (October 22)Volume91
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.2802729Search in ResearchGate
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Mindat Ref. ID8556875Long-form Identifiermindat:1:5:8556875:4
GUID0
Full ReferenceHo, Hsiao-shuo, Chang, Ingram Yin-ku, Lee, Joseph Ya-min (2007) The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics. Applied Physics Letters, 91 (17). 173510pp. doi:10.1063/1.2802729
Plain TextHo, Hsiao-shuo, Chang, Ingram Yin-ku, Lee, Joseph Ya-min (2007) The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics. Applied Physics Letters, 91 (17). 173510pp. doi:10.1063/1.2802729
In(2007, October) Applied Physics Letters Vol. 91 (17) AIP Publishing

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