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Chang, Ingram Yin-ku, Chen, Chun-Heng, Chiu, Fu-Chien, Lee, Joseph Ya-min (2007) The electrical and interfacial properties of metal-high-k oxide-semiconductor field effect transistors with CeO2∕HfO2 laminated gate dielectrics. Applied Physics Letters, 91 (20). 203517pp. doi:10.1063/1.2805218

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Reference TypeJournal (article/letter/editorial)
TitleThe electrical and interfacial properties of metal-high-k oxide-semiconductor field effect transistors with CeO2∕HfO2 laminated gate dielectrics
JournalApplied Physics Letters
AuthorsChang, Ingram Yin-kuAuthor
Chen, Chun-HengAuthor
Chiu, Fu-ChienAuthor
Lee, Joseph Ya-minAuthor
Year2007 (November 12)Volume91
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.2805218Search in ResearchGate
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Mindat Ref. ID8557615Long-form Identifiermindat:1:5:8557615:1
GUID0
Full ReferenceChang, Ingram Yin-ku, Chen, Chun-Heng, Chiu, Fu-Chien, Lee, Joseph Ya-min (2007) The electrical and interfacial properties of metal-high-k oxide-semiconductor field effect transistors with CeO2∕HfO2 laminated gate dielectrics. Applied Physics Letters, 91 (20). 203517pp. doi:10.1063/1.2805218
Plain TextChang, Ingram Yin-ku, Chen, Chun-Heng, Chiu, Fu-Chien, Lee, Joseph Ya-min (2007) The electrical and interfacial properties of metal-high-k oxide-semiconductor field effect transistors with CeO2∕HfO2 laminated gate dielectrics. Applied Physics Letters, 91 (20). 203517pp. doi:10.1063/1.2805218
In(2007, November) Applied Physics Letters Vol. 91 (20) AIP Publishing

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Chen, Chun-Heng, Chang, Ingram Yin-Ku, Lee, Joseph Ya-Min, Chiu, Fu-Chien (2008) Electrical characterization of CeO2∕Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric. Applied Physics Letters, 92 (4). 43507pp. doi:10.1063/1.2838746
Chen, Chun-Heng, Chang, Ingram Yin-Ku, Lee, Joseph Ya-Min, Chiu, Fu-Chien, Chiouand, Yan-Kai, Wu, Tai-Bor (2007) Reliability properties of metal-oxide-semiconductor capacitors using HfO2 high-κ dielectric. Applied Physics Letters, 91 (12). 123507pp. doi:10.1063/1.2786588
Ho, Hsiao-shuo, Chang, Ingram Yin-ku, Lee, Joseph Ya-min (2007) The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics. Applied Physics Letters, 91 (17). 173510pp. doi:10.1063/1.2802729
Chang, Ingram Yin-ku, You, Sheng-wen, Chen, Main-gwo, Juan, Pi-chun, Chen, Chun-heng, Lee, Joseph Ya-min (2009) Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric. Journal of Applied Physics, 105 (10). 104512pp. doi:10.1063/1.3129687
Yeh, Lingyen, Chang, Ingram Yin-Ku, Chen, Chun-Heng, Lee, Joseph Ya-Min (2009) Reliability properties of metal-oxide-semiconductor capacitors using LaAlO3 high-k dielectric. Applied Physics Letters, 95 (16). 162902pp. doi:10.1063/1.3250242
Hsu, De-Cheng, Chang, Ingram Yin-ku, Wang, Ming-Tsong, Juan, Pi-Chun, Wang, Y. L., Lee, Joseph Ya-min (2008) The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric. Applied Physics Letters, 92 (20). 202901pp. doi:10.1063/1.2928235
Chang, Sheng-Chih, Deng, Shao-You, Lee, Joseph Ya-Min (2006) Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with Dy2O3 gate dielectric. Applied Physics Letters, 89 (5). 53504pp. doi:10.1063/1.2217708
Lin, Chih-Ming, Shih, Wen-chieh, Chang, Ingram Yin-ku, Juan, Pi-Chun, Lee, Joseph Ya-min (2009) Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications. Applied Physics Letters, 94 (14). 142905pp. doi:10.1063/1.3114403
Hsu, De-Cheng, Wang, Ming-Tsong, Lee, Joseph Ya-min, Juan, Pi-Chun (2007) Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric. Journal of Applied Physics, 101 (9). 94105pp. doi:10.1063/1.2723861
Chiu, Fu-Chien, Chen, Shuang-Yuan, Chen, Chun-Heng, Chen, Hung-Wen, Huang, Heng-Sheng, Hwang, Huey-Liang (2009) Interfacial and Electrical Characterization in Metal–Oxide–Semiconductor Field-Effect Transistors with CeO2Gate Dielectric. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c014
Hsu, Chih-Hsiang, Wang, Ming-Tsong, Lee, Joseph Ya-Min (2006) Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric. Journal of Applied Physics, 100 (7). 74108pp. doi:10.1063/1.2356902
 
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