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Chen, Chun-Heng, Chang, Ingram Yin-Ku, Lee, Joseph Ya-Min, Chiu, Fu-Chien (2008) Electrical characterization of CeO2∕Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric. Applied Physics Letters, 92 (4). 43507pp. doi:10.1063/1.2838746

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Reference TypeJournal (article/letter/editorial)
TitleElectrical characterization of CeO2∕Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric
JournalApplied Physics Letters
AuthorsChen, Chun-HengAuthor
Chang, Ingram Yin-KuAuthor
Lee, Joseph Ya-MinAuthor
Chiu, Fu-ChienAuthor
Year2008 (January 28)Volume92
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.2838746Search in ResearchGate
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Mindat Ref. ID8565548Long-form Identifiermindat:1:5:8565548:5
GUID0
Full ReferenceChen, Chun-Heng, Chang, Ingram Yin-Ku, Lee, Joseph Ya-Min, Chiu, Fu-Chien (2008) Electrical characterization of CeO2∕Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric. Applied Physics Letters, 92 (4). 43507pp. doi:10.1063/1.2838746
Plain TextChen, Chun-Heng, Chang, Ingram Yin-Ku, Lee, Joseph Ya-Min, Chiu, Fu-Chien (2008) Electrical characterization of CeO2∕Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric. Applied Physics Letters, 92 (4). 43507pp. doi:10.1063/1.2838746
In(2008, January) Applied Physics Letters Vol. 92 (4) AIP Publishing

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Chen, Chun-Heng, Chang, Ingram Yin-Ku, Lee, Joseph Ya-Min, Chiu, Fu-Chien, Chiouand, Yan-Kai, Wu, Tai-Bor (2007) Reliability properties of metal-oxide-semiconductor capacitors using HfO2 high-κ dielectric. Applied Physics Letters, 91 (12). 123507pp. doi:10.1063/1.2786588
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Chang, Sheng-Chih, Deng, Shao-You, Lee, Joseph Ya-Min (2006) Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with Dy2O3 gate dielectric. Applied Physics Letters, 89 (5). 53504pp. doi:10.1063/1.2217708
Ho, Hsiao-shuo, Chang, Ingram Yin-ku, Lee, Joseph Ya-min (2007) The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics. Applied Physics Letters, 91 (17). 173510pp. doi:10.1063/1.2802729
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