Vote for your favorite mineral in #MinCup25! - Calcite vs. Perovskite
This match of heavy hitters is bound to end in heartbreak as classic calcite faces off against futuristic perovskite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Peng, C.-Y., Yuan, F., Yu, C.-Y., Kuo, P.-S., Lee, M. H., Maikap, S., Hsu, C.-H., Liu, C. W. (2007) Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si. Applied Physics Letters, 90 (1). 12114pp. doi:10.1063/1.2400394

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleHole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
JournalApplied Physics Letters
AuthorsPeng, C.-Y.Author
Yuan, F.Author
Yu, C.-Y.Author
Kuo, P.-S.Author
Lee, M. H.Author
Maikap, S.Author
Hsu, C.-H.Author
Liu, C. W.Author
Year2007 (January)Volume90
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.2400394Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8552575Long-form Identifiermindat:1:5:8552575:9
GUID0
Full ReferencePeng, C.-Y., Yuan, F., Yu, C.-Y., Kuo, P.-S., Lee, M. H., Maikap, S., Hsu, C.-H., Liu, C. W. (2007) Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si. Applied Physics Letters, 90 (1). 12114pp. doi:10.1063/1.2400394
Plain TextPeng, C.-Y., Yuan, F., Yu, C.-Y., Kuo, P.-S., Lee, M. H., Maikap, S., Hsu, C.-H., Liu, C. W. (2007) Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si. Applied Physics Letters, 90 (1). 12114pp. doi:10.1063/1.2400394
In(2007, January) Applied Physics Letters Vol. 90 (1) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Kuo, P.-S., Peng, C.-Y., Lee, C.-H., Shen, Y.-Y., Chang, H.-C., Liu, C. W. (2009) Si/Si0.2Ge0.8/Si quantum well Schottky barrier diodes. Applied Physics Letters, 94 (10). 103512pp. doi:10.1063/1.3099337
Liu, C. W., Lee, M. H., Lee, Y. C., Chen, P. S., Yu, C.-Y., Wei, J.-Y., Maikap, S. (2004) Evidence of Si∕SiGe heterojunction roughness scattering. Applied Physics Letters, 85 (21). 4947-4949 doi:10.1063/1.1828224
Liao, M. H., Chang, S. T., Lee, M. H., Maikap, S., Liu, C. W. (2005) Abnormal hole mobility of biaxial strained Si. Journal of Applied Physics, 98 (6). 66104pp. doi:10.1063/1.2041839
Lin, C.-H., Yu, C.-Y., Peng, C.-Y., Ho, W. S., Liu, C. W. (2007) Broadband SiGe∕Si quantum dot infrared photodetectors. Journal of Applied Physics, 101 (3). 33117pp. doi:10.1063/1.2433768
Wei, C. M., Cho, K. S., Chen, Y. F., Peng, Y. H., Chiu, C. W., Kuan, C. H. (2007) Photogalvanic effects for interband transition in p-Si0.5Ge0.5∕Si multiple quantum wells. Applied Physics Letters, 91 (25). 252102pp. doi:10.1063/1.2825572
Huang, S.-H., Lu, T.-M., Lu, S.-C., Lee, C.-H., Liu, C. W., Tsui, D. C. (2012) Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures. Applied Physics Letters, 101 (4). 42111pp. doi:10.1063/1.4739513
Ho, W. S., Lin, C.-H., Cheng, T.-H., Hsu, W. W., Chen, Y.-Y., Kuo, P.-S., Liu, C. W. (2009) Narrow-band metal-oxide-semiconductor photodetector. Applied Physics Letters, 94 (6). 61114pp. doi:10.1063/1.3077313
Yuan, Fu-Te, Sun, An-Cheng, Hsu, Jen-Hwa, Tan, C. S., Kuo, P. C., Liao, W. M., Lee, H. Y. (2011) Coercivity enhancement in L11 Co50-xCuxPt50 thin films. Journal of Applied Physics, 109 (7). 7pp. doi:10.1063/1.3545821
Lin, C.-H., Chiang, Y.-T., Hsu, C.-C., Lee, C.-H., Huang, C.-F., Lai, C.-H., Cheng, T.-H., Liu, C. W. (2007) Ge-on-glass detectors. Applied Physics Letters, 91 (4). 41105pp. doi:10.1063/1.2759982
Chang, W. J., Hsieh, C. C., Chung, T. Y., Hsu, S. Y., Wu, K. H., Uen, T. M., Lin, J.-Y., Lin, J. J., Hsu, C.-H., Kuo, Y. K., Liu, H. L., Hsu, M. H., Gou, Y. S., Juang, J. Y. (2007) Fabrication and low temperature thermoelectric properties of NaxCoO2 (x=0.68 and 0.75) epitaxial films by the reactive solid-phase epitaxy. Applied Physics Letters, 90 (6). 61917pp. doi:10.1063/1.2437131
Lo, M.-H., Tu, P.-M., Wang, C.-H., Cheng, Y.-J., Hung, C.-W., Hsu, S.-C., Kuo, H.-C., Zan, H.-W., Wang, S.-C., Chang, C.-Y., Liu, C.-M. (2009) Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes. Applied Physics Letters, 95 (21). 211103pp. doi:10.1063/1.3266859
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 4, 2025 11:57:52
Go to top of page