Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Zhao, C. Z., Zahid, M. B., Zhang, J. F., Groeseneken, G., Degraeve, R., De Gendt, S. (2007) Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics. Applied Physics Letters, 90 (14). 143502pp. doi:10.1063/1.2719022

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleThreshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics
JournalApplied Physics Letters
AuthorsZhao, C. Z.Author
Zahid, M. B.Author
Zhang, J. F.Author
Groeseneken, G.Author
Degraeve, R.Author
De Gendt, S.Author
Year2007 (April 2)Volume90
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.2719022Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553211Long-form Identifiermindat:1:5:8553211:1
GUID0
Full ReferenceZhao, C. Z., Zahid, M. B., Zhang, J. F., Groeseneken, G., Degraeve, R., De Gendt, S. (2007) Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics. Applied Physics Letters, 90 (14). 143502pp. doi:10.1063/1.2719022
Plain TextZhao, C. Z., Zahid, M. B., Zhang, J. F., Groeseneken, G., Degraeve, R., De Gendt, S. (2007) Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics. Applied Physics Letters, 90 (14). 143502pp. doi:10.1063/1.2719022
In(2007, April) Applied Physics Letters Vol. 90 (14) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Zhao, C. Z., Zhang, J. F., Zahid, M. B., Groeseneken, G., Degraeve, R., De Gendt, S. (2006) Impact of gate materials on positive charge formation in HfO2∕SiO2 stacks. Applied Physics Letters, 89 (2). 23507pp. doi:10.1063/1.2220484
Zhang, J. F., Zhao, C. Z., Chang, M. H., Zahid, M. B., Peaker, A. R., Hall, S., Groeseneken, G., Pantisano, L., De Gendt, S., Heyns, M. (2008) Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks. Applied Physics Letters, 92 (1). 13501pp. doi:10.1063/1.2828697
Houssa, M., Gendt, S. De, Autran, J. L., Groeseneken, G., Heyns, M. M. (2004) Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors. Applied Physics Letters, 85 (11). 2101-2103 doi:10.1063/1.1784549
Pourtois, G., Houssa, M., De Jaeger, B., Kaczer, B., Leys, F., Meuris, M., Caymax, M., Groeseneken, G., Heyns, M. M. (2007) Threshold voltage shifts in Si passivated (100)Ge p-channel field effect transistors: Insights from first-principles modeling. Applied Physics Letters, 91 (2). 23506pp. doi:10.1063/1.2756367
Zhao, C. Z., Zhang, J. F., Zahid, M. B., Govoreanu, B., Groeseneken, G., De Gendt, S. (2006) Determination of capture cross sections for as-grown electron traps in HfO2∕HfSiO stacks. Journal of Applied Physics, 100 (9). 93716pp. doi:10.1063/1.2364043
Johnson, J. G., Forrest, S. R., Zeisse, C. R., Nguyen, R. (1988) Threshold voltage drift of InPn‐channel enhancement mode metal‐insulator‐semiconductor field‐effect transistors. Applied Physics Letters, 52 (6). 495-497 doi:10.1063/1.99423
Ma, Z. J., Lai, P. T., Liu, Z. H., Fleischer, S., Cheng, Y. C. (1990) Tunneling‐injection‐induced turnaround behavior of threshold voltage in thermally nitrided oxiden‐channel metal‐oxide‐semiconductor field‐effect transistors. Journal of Applied Physics, 68 (12). 6299-6303 doi:10.1063/1.346872
O’Sullivan, B. J., Aoulaiche, M., Cho, M. J., Kauerauf, T., Degraeve, R., Okawa, H., Schram, T., Hoffmann, T. Y., Groeseneken, G., Biesemans, S., Nakabayashi, T., Ikeda, A., Niwa, M. (2009) Quantification of metal oxide semiconductor field effect transistor device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics. Journal of Applied Physics, 106 (11). 114504pp. doi:10.1063/1.3262620
Wu, Y. Q., Xuan, Y., Shen, T., Ye, P. D., Cheng, Z., Lochtefeld, A. (2007) Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics. Applied Physics Letters, 91 (2). 22108pp. doi:10.1063/1.2756106
Choi, Changhwan, Lee, Jack C. (2011) Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxide-semiconductor field-effect transistors with nitrogen and silicon incorporated HfO2 gate dielectrics. Applied Physics Letters, 98 (6). 63504pp. doi:10.1063/1.3541879
Chen, Shih-Chang, Chien, Chao-Hsin, Lou, Jen-Chung (2007) Anomalous negative bias temperature instability behavior in p-channel metal-oxide-semiconductor field-effect transistors with HfSiON∕SiO2 gate stack. Applied Physics Letters, 90 (23). 233505pp. doi:10.1063/1.2745649
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Š OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 28, 2025 03:17:44
Go to top of page