Vote for your favorite mineral in #MinCup25! - Pollucite vs. Tugtupite
It's the cesium #pollucite against the optical changeling #tugtupite for this match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Zou, X., Xu, J. P., Li, C. X., Lai, P. T. (2007) Suppressed growth of unstable low-k GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor. Applied Physics Letters, 90 (16). 163502pp. doi:10.1063/1.2723074

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleSuppressed growth of unstable low-k GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
JournalApplied Physics Letters
AuthorsZou, X.Author
Xu, J. P.Author
Li, C. X.Author
Lai, P. T.Author
Year2007 (April 16)Volume90
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2723074Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553471Long-form Identifiermindat:1:5:8553471:1
GUID0
Full ReferenceZou, X., Xu, J. P., Li, C. X., Lai, P. T. (2007) Suppressed growth of unstable low-k GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor. Applied Physics Letters, 90 (16). 163502pp. doi:10.1063/1.2723074
Plain TextZou, X., Xu, J. P., Li, C. X., Lai, P. T. (2007) Suppressed growth of unstable low-k GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor. Applied Physics Letters, 90 (16). 163502pp. doi:10.1063/1.2723074
In(2007, April) Applied Physics Letters Vol. 90 (16) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Xu, H. X., Xu, J. P., Li, C. X., Lai, P. T. (2010) Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient. Applied Physics Letters, 97 (2). 22903pp. doi:10.1063/1.3462301
Ji, F., Xu, J. P., Liu, J. G., Li, C. X., Lai, P. T. (2011) Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer. Applied Physics Letters, 98 (18). 182901pp. doi:10.1063/1.3581891
Zhang, X. F., Xu, J. P., Li, C. X., Lai, P. T., Chan, C. L., Guan, J. G. (2008) Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer. Applied Physics Letters, 92 (26). 262902pp. doi:10.1063/1.2954012
Xu, J. P., Ji, F., Li, C. X., Lai, P. T., Guan, J. G., Liu, Y. R. (2007) Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer. Applied Physics Letters, 91 (15). 152905pp. doi:10.1063/1.2798248
Li, C. X., Lai, P. T. (2009) Wide-bandgap high-k Y2O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high-k HfTiO gate dielectric. Applied Physics Letters, 95 (2). 22910pp. doi:10.1063/1.3182741
Liu, L. N., Choi, H. W., Xu, J. P., Lai, P. T. (2017) High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric. Applied Physics Letters, 110 (12). 123506pp. doi:10.1063/1.4979101
Xu, H. X., Xu, J. P., Li, C. X., Chan, C. L., Lai, P. T. (2010) Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric. Applied Physics A, 99. 903-906 doi:10.1007/s00339-010-5665-5
Xu, J. P., Zhang, X. F., Li, C. X., Chan, C. L., Lai, P. T. (2010) Comparative Study of HfTa-based gate-dielectric Ge metal–oxide–semiconductor capacitors with and without AlON interlayer. Applied Physics A, 99. 177-180 doi:10.1007/s00339-009-5480-z
Ji, F., Xu, J. P., Lai, P. T., Li, C. X., Guan, J. G. (2007) Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations. Applied Physics Letters, 91 (5). 52902pp. doi:10.1063/1.2767177
Lin, L. M., Lai, P. T. (2007) Effects of NO Annealing and GaO[sub x]N[sub y] Interlayer on GaN Metal-Insulator-Semiconductor Capacitor with SiO[sub 2] Gate Dielectric. Journal of the Electrochemical Society, 154. doi:10.1149/1.2429043
Wang, L. S., Xu, J. P., Liu, L., Lu, H. H., Lai, P. T., Tang, W. M. (2015) Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric. Applied Physics Letters, 106 (12). 123504pp. doi:10.1063/1.4916539
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 8, 2025 09:35:43
Go to top of page